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    Self cleaning flow control orifice
    1.
    发明授权
    Self cleaning flow control orifice 失效
    自清洁流量控制器

    公开(公告)号：US5113789A

    公开(公告)日：1992-05-19

    申请号：US513807

    申请日：1990-04-24

    Applicant: George D. Kamian

    Inventor： George D. Kamian

    IPC: C23C16/44 ,  C23C14/56 ,  C23C16/54 ,  H01L21/285 ,  H01L21/31

    CPC classification number: C23C14/564 ,  C23C16/545

    Abstract: A self cleaning flow control orifice mounted in an exhaust line. A toroid having a rounded inner surface is mounted in the exhaust line and forms an orifice. A cleaning device is mounted in a manner to provide close contact between the cleaning device and the rounded surface. The toroid and cleaning device are rotated relative to one another so that the cleaning device rides over the rounded surface to clean the surface. The clean surface thereby insures proper functioning of the exhaust system of an atmospheric pressure chemical vapor deposition apparatus used to deposit films on substrates and wafers.

    Purging of porogen from UV cure chamber
    3.
    发明授权
    Purging of porogen from UV cure chamber 有权
    从UV固化室清洗致孔剂

    公开(公告)号：US08518210B2

    公开(公告)日：2013-08-27

    申请号：US13562421

    申请日：2012-07-31

    Applicant: Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

    Inventor： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

    IPC: C23F1/00 ,  H01L21/306

    CPC classification number: H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

    Abstract: An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

    Abstract translation: 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

    POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD
    4.
    发明申请
    POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD 有权
    多孔硅电蚀刻系统及方法

    公开(公告)号：US20110120882A1

    公开(公告)日：2011-05-26

    申请号：US12688495

    申请日：2010-01-15

    Applicant: Doug Crafts ,  Mehrdad Moslehi ,  Subramanian Tamilmani ,  Joe Kramer ,  George D. Kamian ,  Somnath Nag

    Inventor： Doug Crafts ,  Mehrdad Moslehi ,  Subramanian Tamilmani ,  Joe Kramer ,  George D. Kamian ,  Somnath Nag

    IPC: H01L31/18

    CPC classification number: C25F3/12 ,  C25D11/32 ,  C25F7/00 ,  H01L21/67005 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/6776 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

    Abstract translation: 本发明的一个目的是提供高生产率，低成本的制造设备用于大量生产光伏（PV）太阳能电池器件结构。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。

    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
    5.
    发明申请
    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
    高效多孔半导体制造设备

    公开(公告)号：US20110030610A1

    公开(公告)日：2011-02-10

    申请号：US12774667

    申请日：2010-05-05

    Applicant: George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    Inventor： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    IPC: C25F3/12 ,  C25F7/00 ,  C30B19/08 ,  C30B23/06 ,  C30B25/10

    CPC classification number: C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

    Abstract translation: 本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。 其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。 此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

    PURGING OF POROGEN FROM UV CURE CHAMBER
    8.
    发明申请
    PURGING OF POROGEN FROM UV CURE CHAMBER 有权
    从紫外线固化室中除去多孔元素

    公开(公告)号：US20130160946A1

    公开(公告)日：2013-06-27

    申请号：US13562421

    申请日：2012-07-31

    Applicant: Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

    Inventor： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

    IPC: H01L21/02

    CPC classification number: H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

    Abstract: An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

    Abstract translation: 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

    High-productivity porous semiconductor manufacturing equipment
    10.
    发明授权
    High-productivity porous semiconductor manufacturing equipment 有权
    高效多孔半导体制造设备

    公开(公告)号：US08999058B2

    公开(公告)日：2015-04-07

    申请号：US12774667

    申请日：2010-05-05

    Applicant: George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    Inventor： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    IPC: C30B1/10 ,  C25D11/32 ,  H01L31/18 ,  C25D17/00 ,  C25D17/06 ,  C25D11/00

    CPC classification number: C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

    Abstract translation: 本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。 其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。 此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

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