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    Adjusting device
    2.
    发明授权
    Adjusting device 有权

    公开(公告)号：US10857637B2

    公开(公告)日：2020-12-08

    申请号：US16753879

    申请日：2018-10-12

    Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

    Inventor： Uwe Bartheld

    IPC: B23Q1/38 ,  B23Q3/18 ,  F16M7/00

    Abstract: The invention relates to an adjusting device for spatially adjusting the position of an object, comprising a plurality of plate elements which are arranged one over the other and which have radial guide structures that engage into one another at mutually facing sides, wherein at least one pair of movement plates and a pair of inclination plates are arranged on a base. The movement plates have a constant thickness, and the respective upper radial guide structures and lower radial guide structures of each movement plate are offset eccentrically relative to one another. The inclination plates have a variable thickness, and the respective upper radial guide structures and lower radial guide structures of each inclination plate are arranged concentrically to one another.

    Method and means for operating a complementary analogue reconfigurable memristive resistive switch and use thereof as an artificial synapse
    3.
    发明授权
    Method and means for operating a complementary analogue reconfigurable memristive resistive switch and use thereof as an artificial synapse 有权

    公开(公告)号：US10388370B2

    公开(公告)日：2019-08-20

    申请号：US16092001

    申请日：2017-04-03

    Applicant: Helmholtz-Zentrum Dresden—Rossendorf e.V.

    Inventor： Heidemarie Schmidt ,  Kefeng Li ,  Ilona Skorupa ,  Nan Du

    IPC: G11C13/00 ,  G06N3/04 ,  G06N3/063 ,  H03K19/20 ,  G11C11/54 ,  H01L45/00

    Abstract: An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realization of all four learning curves for complementary learning. A plurality of options for the use of the device are proposed.

    Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
    7.
    发明申请
    Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence 有权
    互补电阻开关，接触式多晶压电或铁电薄膜层，加密位序列的方法

    公开(公告)号：US20150364682A1

    公开(公告)日：2015-12-17

    申请号：US14761319

    申请日：2014-01-16

    Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

    Inventor： Tiangui YOU ,  Heidemarie SCHMIDT ,  Nan DU ,  Danilo BUERGER ,  Ilona SKORUPA

    IPC: H01L45/00 ,  G11C13/00

    CPC classification number: H01L45/147 ,  G09C1/00 ,  G11C13/0007 ,  H01L27/2472 ,  H01L31/0749 ,  H01L45/065 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1641 ,  H01L45/165 ,  H03K19/08 ,  H04L9/00 ,  H04L9/065 ,  H04L2209/12 ,  Y02E10/541

    Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11′, 11″) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

    Abstract translation: 公开了一种互补电阻器开关（3），其包括两个外部触点，在其间位于具有内部公共触点的两个压电层或铁电层（11a和11b）之间。 这些层的至少一个区域（11'，11“）被修改，外部触点是整流（S），内部触点是非整流（0），反之亦然，修正区域形成在整流 接触，这些层具有不同的带隙和/或不同极化电荷的不同的应变依赖结构相，并且层的导电性不同。 还公开了一种可连接的电阻器结构，其在两个相邻的压电或铁电层具有至少一个肖特基接触，包含经修改的微晶的多晶压电或铁电层，以及用于加密和解密位序列的方法和电路。

    Two-axis rotator
    10.
    发明授权
    Two-axis rotator 有权

    公开(公告)号：US11835112B2

    公开(公告)日：2023-12-05

    申请号：US17905338

    申请日：2021-03-03

    Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

    Inventor： Stefan Findeisen

    IPC: F16H1/22 ,  F16M11/12 ,  F16M11/18 ,  B01L3/00 ,  G01N23/2204 ,  H01J37/20

    CPC classification number: F16H1/225 ,  B01L3/505 ,  B01L3/508 ,  B01L3/50825 ,  F16M11/12 ,  F16M11/18 ,  G01N23/2204 ,  H01J37/20

    Abstract: The invention relates to a two-axis rotator for producing a rotation about two orthogonal spatial axes, and to a handling device comprising a two-axis rotator of this kind. The two-axis rotator for producing a rotation about two mutually orthogonal rotational axes comprises a main body, a first rotor and a second rotor, wherein the first rotor is mounted on or in the main body so as to be able to rotate about a first rotational axis, and the second rotor is mounted on or in the first rotor so as to be able to rotate about a second rotational axis, and wherein the first rotor has a first drive and the second rotor has a second drive, and the first drive and the second drive can be driven independently of one another.

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