公开(公告)号：US20060118721A1

公开(公告)日：2006-06-08

申请号：US10524140

申请日：2003-08-13

Applicant: Jarek Antoszewski ,  John Dell ,  Lorenzo Faraone ,  Charles Musca ,  Kevin Winchester

Inventor： Jarek Antoszewski ,  John Dell ,  Lorenzo Faraone ,  Charles Musca ,  Kevin Winchester

IPC: H01L27/14

CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/26 ,  G02B26/001 ,  H01L31/02327 ,  H01L31/02966 ,  H01L31/1013 ,  H01L31/1032

Abstract: A detector device (75) for detecting incident radiation at particular wavelengths is disclosed. The device (75) includes a base layer comprising a substrate (77). A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer (83) disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer (91) disposed on a membrane (89) in substantially parallel relationship to the substrate (77). A detector (79) is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector (79) within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device (75) and different methods of fabricating the same are also disclosed.

Abstract translation: 公开了用于检测特定波长的入射辐射的检测器装置（75）。 该装置（75）包括一个包括基底（77）的基层。 在一对反射器之间的基底层上形成谐振腔。 一个反射器由相对于基底层固定关系设置的第一反射器层（83）形成，而另一个反射器由设置在膜（89）上的与基底基本平行的第二反射层（91）形成 （77）。 在腔内提供检测器（79）以吸收其中的入射辐射用于检测目的。 通过将检测器（79）的吸收层放置在谐振腔内，可以使用非常薄的吸收层实现高量子效率，从而显着降低检测器体积，从而显着降低噪声。 还公开了检测器装置（75）的各种不同布置及其制造方法。

公开(公告)号：US20050226281A1

公开(公告)日：2005-10-13

申请号：US10507015

申请日：2003-03-10

Applicant: Lorenzo Faraone ,  John Dell ,  Charles Musca ,  Jarek Antoszewski ,  Kevin Winchester

Inventor： Lorenzo Faraone ,  John Dell ,  Charles Musca ,  Jarek Antoszewski ,  Kevin Winchester

IPC: G02B26/00 ,  H01S3/08 ,  H01S3/10

CPC classification number: G02B26/001 ,  G01J3/26 ,  H01S3/08059 ,  H01S3/105

Abstract: A tunable cavity resonator for filtering radiation in the optical and IR wavelengths and a method for fabricating same. The resonator having a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also including a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector. A first reflector layer is deposited on the substrate to form the one reflector. A sacrificial layer having a high etch selectivity for releasing the membrane in a suspended and spaced relationship from the one reflector is formed on the first reflector layer. The membrane is deposited on the sacrificial layer using a deposition technique characterised by providing the required intrinsic stress in the membrane. A second reflector layer is formed on the membrane to form the other reflector. The second reflector layer is patterned in accordance with a prescribed membrane geometry and then etched to achieve the same. The sacrificial layer is then initially etched to remove regions thereof down to the first reflector layer on the substrate exposed by the etching. Those regions of the sacrificial layer that are intended to function as the residual support structure of the membrane are then protected with photoresist and the remaining unprotected regions of the sacrificial layer are finally etched, removing the protection from the support structures to suspend the membrane in substantially parallel relation to the first reflector layer.

Abstract translation: 用于对光和IR波长的辐射进行滤波的可调谐腔谐振器及其制造方法。 谐振器具有一对反射器，一个与基板固定，另一个反射器形成在悬挂的可移动膜上，其设置有来自该反射器的腔长度。 谐振器还包括由反射器构成或与之并置的一对间隔开的电极，其可静电操作以相对于一个反射器移动膜和其它反射器。 第一反射器层沉积在基板上以形成一个反射器。 在第一反射器层上形成具有高的蚀刻选择性的牺牲层，用于以与悬臂间隔的关系释放膜。 使用沉积技术将膜沉积在牺牲层上，其特征在于在膜中提供所需的内在应力。 在膜上形成第二反射层以形成另一个反射器。 根据规定的膜几何形状对第二反射器层进行图案化，然后蚀刻以实现其。 然后最初蚀刻牺牲层以将其区域向下移动到通过蚀刻暴露的衬底上的第一反射器层。 旨在用作膜的残余支撑结构的牺牲层的那些区域然后用光致抗蚀剂保护，并且最终蚀刻牺牲层的剩余的未保护区域，从支撑结构去除保护以将膜悬浮在基本上 与第一反射层平行的关系。

公开(公告)号：US08003427B2

公开(公告)日：2011-08-23

申请号：US12153412

申请日：2008-05-19

Applicant: Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

Inventor： Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

IPC: H01L21/00

CPC classification number: G02B26/001 ,  G01J3/26 ,  H01S3/08059 ,  H01S3/105

Abstract: An example tunable cavity resonator for filtering radiation in the optical and IR wavelengths and an example method for fabricating same. The example resonator includes a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also includes a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector.

Abstract translation: 用于对光学和红外波长的辐射进行滤波的示例性可调谐空腔谐振器及其制造方法。 示例性谐振器包括一对反射器，其一个与基板固定，另一个反射器形成在悬挂的可移动膜上，其设置有来自该反射器的腔长度。 谐振器还包括由反射器构成或与其并置的一对间隔开的电极，其可静电操作以相对于一个反射器移动膜和其它反射器。

公开(公告)号：US20090303570A1

公开(公告)日：2009-12-10

申请号：US12153412

申请日：2008-05-19

Applicant: Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

Inventor： Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

IPC: G02B26/00 ,  C23F1/00 ,  C23C16/513

CPC classification number: G02B26/001 ,  G01J3/26 ,  H01S3/08059 ,  H01S3/105

Abstract: An example tunable cavity resonator for filtering radiation in the optical and IR wavelengths and an example method for fabricating same. The example resonator includes a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also includes a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector.

Abstract translation: 用于对光学和红外波长的辐射进行滤波的示例性可调谐空腔谐振器及其制造方法。 示例性谐振器包括一对反射器，其一个与基板固定，另一个反射器形成在悬挂的可移动膜上，其设置有来自该反射器的腔长度。 谐振器还包括由反射器构成或与其并置的一对间隔开的电极，其可静电操作以相对于一个反射器移动膜和其它反射器。

公开(公告)号：US07541584B2

公开(公告)日：2009-06-02

申请号：US10524140

申请日：2003-08-13

Applicant: Jarek Antoszewski ,  John M Dell ,  Lorenzo Faraone ,  Charles A Musca ,  Kevin J Winchester

Inventor： Jarek Antoszewski ,  John M Dell ,  Lorenzo Faraone ,  Charles A Musca ,  Kevin J Winchester

IPC: H01L27/14

CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/26 ,  G02B26/001 ,  H01L31/02327 ,  H01L31/02966 ,  H01L31/1013 ,  H01L31/1032

Abstract: A detector device for detecting incident radiation at particular wavelengths is disclosed. The device includes a base layer comprising a substrate. A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer disposed on a membrane in substantially parallel relationship to the substrate. A detector is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device and different methods of fabricating the same are also disclosed.

Abstract translation: 公开了用于检测特定波长的入射辐射的检测器装置。 该装置包括包含基底的基层。 在一对反射器之间的基底层上形成谐振腔。 一个反射器由相对于基底层固定关系设置的第一反射器层形成，而另一个反射器由设置在膜上的与基底基本平行的第二反射层形成。 在腔内提供检测器以吸收其中的入射辐射用于检测目的。 通过将检测器的吸收层放置在谐振腔内，可以使用非常薄的吸收层实现高量子效率，从而显着降低检测器体积，从而显着降低噪声。 还公开了检测器装置的各种不同布置及其制造方法。

公开(公告)号：US20050121747A1

公开(公告)日：2005-06-09

申请号：US10501778

申请日：2003-01-17

Applicant: Jarek Antoszewski ,  John Dell ,  Charles Musca ,  Lorenzo Faraone ,  Brett Nener ,  John Siliquini

Inventor： Jarek Antoszewski ,  John Dell ,  Charles Musca ,  Lorenzo Faraone ,  Brett Nener ,  John Siliquini

IPC: H01L21/8238 ,  H01L27/06 ,  H01L27/14 ,  H01L27/146 ,  H01L29/00 ,  H01L29/22 ,  H01L31/0296 ,  H01L31/102 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/0605 ,  H01L27/14643 ,  H01L27/14696 ,  H01L29/22 ,  H01L31/1032 ,  H01L31/1828 ,  Y02E10/543

Abstract: An automatically passivated n-p junction is formed from a p-type body containing Group II and Group VI elements, one of which is mercury. A passivation layer is then formed having at least one window provided therein on a surface of the p-type body. The p-type body is then subjected to a reactive ion etching process using the passivation layer as a mask to form the n-p junction. Ohmic contacts are then formed on the n-type and p-type regions. The method may be extended to form an array of n-p junctions on a semiconductor body having a plurality of p-type material layers. This method comprises the further step of: etching the body to expose a portion of each layer; forming a passivation layer over the body; forming windows in the passivation layer; subjecting the body to a reactive ion etching process using the passivation layer as a mask to form an n-p junction in each layer or to form n-p junctions that extend substantially to the substrate; forming an ohmic contact to each of the n-type regions; and forming an ohmic contact to a common p-type layer or each layer of the portions. A semiconductor material comprising an n-p junction formed according to the aforementioned methods is also described, having a substrate, a layer of p-type material surmounting the substrate, a region of converted n-type material formed on a localised portion of the surface of the p-type material, so as to define an n-p junction between the p-type and the n-type material; a passivation layer surmounting the surface of the p-type material and the n-p junction, including windows respectively exposing part of the surface of the converted n-type material and a portion of the surface of the p-type material distant from the n-type material, such that ohmic contacts may be disposed on the exposed surface, without exposing the n-p junction.

Abstract translation: 由含有II族和VI族元素的p型体形成自动钝化的n-p结，其中之一是汞。 然后形成钝化层，其中在p型体的表面上设置有至少一个窗口。 然后使用钝化层作为掩模对p型体进行反应离子蚀刻工艺以形成n-p结。 然后在n型和p型区域上形成欧姆接触。 该方法可以扩展以在具有多个p型材料层的半导体主体上形成n-p结阵列。 该方法还包括以下步骤：蚀刻所述主体以暴露每层的一部分; 在身体上形成钝化层; 在钝化层中形成窗; 使用钝化层作为掩模对体进行反应离子蚀刻工艺，以在每个层中形成n-p结或形成基本上延伸到衬底的n-p结; 与n型区域中的每一个形成欧姆接触; 并且形成与共同的p型层或各层的欧姆接触。 还描述了包括根据上述方法形成的np结的半导体材料，其具有衬底，覆盖衬底的p型材料层，形成在表面的局部部分上的转换的n型材料的区域 p型材料，以便在p型和n型材料之间限定np结; 覆盖p型材料和np结的表面的钝化层，包括分别暴露转换的n型材料的表面的一部分和远离n型材料的p型材料的表面的一部分的窗口 材料，使得欧姆接触可以设置在暴露的表面上，而不暴露np结。