公开(公告)号：US06800173B2

公开(公告)日：2004-10-05

申请号：US09902080

申请日：2001-07-09

Applicant: Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

Inventor： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC: H05H100

CPC classification number: C23C16/45525 ,  C23C16/0227 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838

Abstract: A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.

Abstract translation: 根据本发明的一个实施例的沉积系统包括处理室，用于在处理室中支撑基板的固定基座和形成限定处理室的外壳的至少一部分的可移动屏蔽。 屏蔽件相对于固定基座的运动控制用于流过处理室的气体的可变气体传导路径，从而相对于外部体积调节处理室的压力。 根据本发明的实施例的可移动屏蔽可以包括用于将各种处理气体引入处理室的多个气体通道开口。 在一些实施例中，可移动屏蔽可替代地或另外包括用于温度控制的内部冷却或加热通道。

公开(公告)号：US20110164862A1

公开(公告)日：2011-07-07

申请号：US12896559

申请日：2010-10-01

Applicant: Kirk M. Hirano ,  Jason E. Babcoke ,  Albert L. Carrillo ,  Douwe D. Haga ,  Pin Kao ,  Patrick D. Kinney ,  James C. Nurse

Inventor： Kirk M. Hirano ,  Jason E. Babcoke ,  Albert L. Carrillo ,  Douwe D. Haga ,  Pin Kao ,  Patrick D. Kinney ,  James C. Nurse

IPC: H05B3/02

CPC classification number: B01L7/52 ,  B01L3/50851 ,  B01L3/50853 ,  B01L3/50857 ,  B01L7/00 ,  B01L2200/0605 ,  B01L2200/0642 ,  B01L2300/0654 ,  B01L2300/0829 ,  B01L2300/1816 ,  B01L2300/1838 ,  B01L2300/1861 ,  B01L2300/1872 ,  F28F13/00 ,  F28F2013/001 ,  G01N21/0332 ,  G01N21/6452 ,  G01N2201/062 ,  H05B3/84 ,  H05B6/02 ,  H05B6/105

Abstract: A heating apparatus comprising a support base and a microplate having a first surface and an opposing second surface. The microplate is positioned adjacent the support base and comprises a plurality of wells formed in the first surface thereof. Each of the plurality of wells is sized to receive an assay therein. A sapphire crystalline transparent window is positioned adjacent the microplate opposing the support base. A heating device heats the transparent window in response to a control system.

Abstract translation: 一种加热设备，包括支撑基座和具有第一表面和相对的第二表面的微孔板。 微孔板位于支撑基底附近并且包括在其第一表面中形成的多个阱。 多个孔中的每一个的大小适于在其中接受测定。 蓝宝石结晶透明窗口位于与支撑基座相对的微孔板附近。 加热装置响应于控制系统加热透明窗口。

公开(公告)号：US07806983B2

公开(公告)日：2010-10-05

申请号：US10921604

申请日：2004-08-18

Applicant: Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

Inventor： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC: H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC classification number: C23C16/45544 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843 ,  Y10T279/23

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

Abstract translation: 沉积系统包括用于进行ALD工艺以在衬底上沉积层的处理室。 静电吸盘（ESC）保持基板。 背面气体增加了基板和ESC之间的热耦合。 ESC通过冷却剂流经冷却剂冷却并通过电阻加热器加热。 公开了各种布置。

公开(公告)号：US07189432B2

公开(公告)日：2007-03-13

申请号：US10027592

申请日：2001-12-19

Applicant: Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

Inventor： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC: C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/0227 ,  C23C16/4411 ,  C23C16/4486 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas flux on the substrate is controlled by controlling the conductance between the process chamber and a lower pressure volume outside the process chamber. The flux of the gas on the substrate varies inversely with the chamber conductance, such that the flux of the gas on the substrate increases when the conductance decreases. Various methods of performing an ALD process by controlling the conductance are disclosed as well as various structures for controlling the conductance.

Abstract translation: 沉积系统包括用于进行ALD工艺以在衬底上沉积层的处理室。 在一个实施例中，通过控制处理室上游的气体流而不是改变腔室中的衬底上的气体通量，通过控制处理室和外部较低压力体积之间的电导来控制衬底上的气体通量 处理室。 衬底上的气体通量与室电导反向变化，使得当电导降低时，衬底上气体的通量增加。 公开了通过控制电导进行ALD处理的各种方法以及用于控制电导的各种结构。

公开(公告)号：US07318869B2

公开(公告)日：2008-01-15

申请号：US10930536

申请日：2004-08-30

Applicant: Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

Inventor： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC: C23C16/00

CPC classification number: C23C16/45525 ,  C23C16/0227 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838

Abstract: A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.

Abstract translation: 根据本发明的一个实施例的沉积系统包括处理室，用于在处理室中支撑基板的固定基座和形成限定处理室的外壳的至少一部分的可移动屏蔽。 屏蔽件相对于固定基座的运动控制用于流过处理室的气体的可变气体传导路径，从而相对于外部体积调节处理室的压力。 根据本发明的实施例的可移动屏蔽可以包括用于将各种处理气体引入处理室的多个气体通道开口。 在一些实施例中，可移动屏蔽可替代地或另外包括用于温度控制的内部冷却或加热通道。

公开(公告)号：US06630201B2

公开(公告)日：2003-10-07

申请号：US09999636

申请日：2001-10-24

Applicant: Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

Inventor： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC: C23C1600

CPC classification number: C23C16/4412 ,  C23C16/0227 ,  C23C16/4411 ,  C23C16/4486 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838

Abstract: A method for conducting an ALD process to deposit layers on a substrate which includes an electrostatic chuck (ESC) to retain the substrate. Electrode(s) in the chuck assembly are used to induce a voltage on the substrate to promote precursor adsorption on the substrate.

Abstract translation: 一种用于进行ALD处理以在包括静电卡盘（ESC）的基板上沉积层以保持基板的方法。 卡盘组件中的电极用于在衬底上引起电压以促进衬底上的前体吸附。

公开(公告)号：US08945481B1

公开(公告)日：2015-02-03

申请号：US12145333

申请日：2008-06-24

Applicant: Mark F. Oldham ,  Kenneth J. Livak ,  Jason E. Babcoke ,  H. Pin Kao ,  Stephen J. Gunstream ,  Kevin S. Bodner ,  Douglas P. Greiner ,  Nigel P. Beard ,  Dar Bahatt

Inventor： Mark F. Oldham ,  Kenneth J. Livak ,  Jason E. Babcoke ,  H. Pin Kao ,  Stephen J. Gunstream ,  Kevin S. Bodner ,  Douglas P. Greiner ,  Nigel P. Beard ,  Dar Bahatt

IPC: B01L3/00

CPC classification number: B01J19/0046 ,  B01L3/502715 ,  B01L3/502738 ,  B01L7/52 ,  B01L2200/027 ,  B01L2200/10 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0819 ,  B01L2300/0867 ,  B01L2300/185 ,  B01L2400/0655 ,  G01N21/17 ,  G01N2201/0407

Abstract: Exemplary embodiments provide microfludic devices and methods for their use. The microfluidic device can include an array of M×N reaction sites formed by intersecting a first and second plurality of fluid channels of a flow layer. The flow layer can have a matrix design and/or a blind channel design to analyze a large number of samples under a limited number of conditions. The microfluidic device can also include a control layer including a valve system for regulating solution flow through fluid channels. In addition, by aligning the control layer with the fluid channels, the detection of the microfluidic devices, e.g., optical signal collection, can be improved by piping lights to/from the reaction sites. In an exemplary embodiment, guard channels can be included in the microfluidic device for thermal cycling and/or reducing evaporation from the reaction sites.

Abstract translation: 示例性实施例提供了用于它们的微流体装置和方法。 微流体装置可以包括通过与流动层的第一和第二多个流体通道相交形成的M×N反应位点的阵列。 流层可以具有矩阵设计和/或盲通道设计，以在有限数量的条件下分析大量样品。 微流体装置还可以包括控制层，其包括用于调节通过流体通道的溶液流动的阀门系统。 此外，通过使控制层与流体通道对准，可以通过向/从反应位置的管道灯来改善微流体装置的检测，例如光学信号收集。 在示例性实施例中，保护通道可以包括在微流体装置中用于热循环和/或减少从反应位置的蒸发。