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公开(公告)号：US20100092690A1
公开(公告)日：2010-04-15
申请号：US12517211
申请日：2007-11-07
Applicant: Khristopher Alvarez , Nick Shephard , James Tonge
Inventor： Khristopher Alvarez , Nick Shephard , James Tonge
CPC classification number: C08G77/50 , C08J3/243 , C08J2383/04 , C08K5/54 , C09D183/14 , Y10T428/31663
Abstract: A polymer cures by either radiation or moisture curing mechanisms, or both. The polymer is prepared by hydrosilylation. The polymer includes units of formula: (R22Si02/2)b, (R2Si03/2)c, (SiO4/2)d, (R1′)f, and (R23Si01/2)g, where each R1 is independently an oxygen atom or a divalent hydrocarbon group; each R1′ is independently divalent hydrocarbon group; each R2 is independently a monovalent organic group that is free of terminal aliphatic unsaturation each X is independently a monovalent hydrolyzable group; each J is independently a monovalent epoxy functional organic group; subscript a has a value of 1 or more; subscript b has a value of 0 or more; subscript c has a value of 0 or more; subscript d has a value of 0 or more; subscript e has a value of 1 or more; subscript f has a value of 0 or more; subscript g has a value of 0 or more; subscript s is 1, 2, or 3; and subscript t is 1, 2, or 3.
Abstract translation: 聚合物通过辐射或湿气固化机制或两者固化。 聚合物通过氢化硅烷化制备。 聚合物包括式（R22SiO2 / 2）b，（R2Si03 / 2）c，（SiO4 / 2）d，（R1'）f和（R23Si01 / 2）g的单元，其中每个R1独立地是氧原子 或二价烃基; 每个R1'独立地为二价烃基; 每个R 2独立地是不含末端脂族不饱和键的一价有机基团，每个X独立地是一价可水解基团; 每个J独立地是一价环氧官能的有机基团; 下标a的值为1以上; 下标b的值为0以上; 下标c的值为0以上; 下标d的值为0以上; 下标e的值为1以上; 下标f的值为0以上; 下标g的值为0以上; 下标s为1,2或3; 下标t为1,2或3。
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公开(公告)号：US20080054806A1
公开(公告)日：2008-03-06
申请号：US11883992
申请日：2006-05-09
Applicant: Khristopher Alvarez , Nick Shephard , James Tonge
Inventor： Khristopher Alvarez , Nick Shephard , James Tonge
CPC classification number: C09D5/086 , H01J9/02 , H01J11/10 , H01J11/22 , H01J2211/225 , H01L21/76838 , H05K3/285 , H05K3/323 , H05K2201/0769 , H05K2203/124
Abstract: A process for reducing Ag electromigration in electronic circuitry includes the step of treating the electronic circuitry with an electromigration resistant composition. This process is useful in fabricating electronic devices having electronic circuitry that is close together, such as resistors, capacitors, and displays, e.g., a plasma display panel (PDP) or a liquid crystal display (LCD).
Abstract translation: 用于减少电子电路中的Ag电迁移的方法包括用电迁移组合物处理电子电路的步骤。 该方法在制造具有诸如电阻器，电容器和显示器（例如等离子体显示面板（PDP）或液晶显示器（LCD））之类的紧密结合的电子电路的电子设备中是有用的。
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公开(公告)号：US08618233B2
公开(公告)日：2013-12-31
申请号：US12517211
申请日：2007-11-07
Applicant: Khristopher Alvarez , Nick Shephard , James Tonge
Inventor： Khristopher Alvarez , Nick Shephard , James Tonge
IPC: C08G77/08
CPC classification number: C08G77/50 , C08J3/243 , C08J2383/04 , C08K5/54 , C09D183/14 , Y10T428/31663
Abstract: A polymer cures by either radiation or moisture curing mechanisms, or both. The polymer is prepared by hydrosilylation. The polymer includes units of formula: (R22Si02/2)b, (R2Si03/2)c, (SiO4/2)d, (R1′)f, and (R23Si01/2)g, where each R1 is independently an oxygen atom or a divalent hydrocarbon group; each R1′ is independently divalent hydrocarbon group; each R2 is independently a monovalent organic group that is free of terminal aliphatic unsaturation each X is independently a monovalent hydrolyzable group; each J is independently a monovalent epoxy functional organic group; subscript a has a value of 1 or more; subscript b has a value of 0 or more; subscript c has a value of 0 or more; subscript d has a value of 0 or more; subscript e has a value of 1 or more; subscript f has a value of 0 or more; subscript g has a value of 0 or more; subscript s is 1, 2, or 3; and subscript t is 1, 2, or 3.
Abstract translation: 聚合物通过辐射或湿气固化机制或两者固化。 聚合物通过氢化硅烷化制备。 聚合物包括式（R22SiO2 / 2）b，（R2Si03 / 2）c，（SiO4 / 2）d，（R1'）f和（R23Si01 / 2）g的单元，其中每个R1独立地是氧原子 或二价烃基; 每个R1'独立地为二价烃基; 每个R 2独立地是不含末端脂族不饱和键的一价有机基团，每个X独立地是一价可水解基团; 每个J独立地是一价环氧官能的有机基团; 下标a的值为1以上; 下标b的值为0以上; 下标c的值为0以上; 下标d的值为0以上; 下标e的值为1以上; 下标f的值为0以上; 下标g的值为0以上; 下标s为1,2或3; 下标t为1,2或3。
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