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公开(公告)号：US20090278628A1
公开(公告)日：2009-11-12
申请号：US12306631
申请日：2007-06-14
Applicant: Marc Sworowski , Davud D. R. Chevrie , Pascal Philippe
Inventor： Marc Sworowski , Davud D. R. Chevrie , Pascal Philippe
CPC classification number: B81C1/00198 , B81B2201/0292 , H03H3/0072
Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.
Abstract translation: 制造集成在硅衬底中的MEMS器件的方法。 与MEMS器件的制造同时，可以处理具有高电容密度的沟槽电容器的无源部件。 该方法特别适用于谐振频率在10 MHz范围内的MEMS谐振器。
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公开(公告)号：US07982558B2
公开(公告)日：2011-07-19
申请号：US12306631
申请日：2007-06-14
Applicant: Marc Sworowski , David D. R. Chevrie , Pascal Philippe
Inventor： Marc Sworowski , David D. R. Chevrie , Pascal Philippe
CPC classification number: B81C1/00198 , B81B2201/0292 , H03H3/0072
Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.
Abstract translation: 制造集成在硅衬底中的MEMS器件的方法。 与MEMS器件的制造同时，可以处理具有高电容密度的沟槽电容器的无源部件。 该方法特别适用于谐振频率在10 MHz范围内的MEMS谐振器。
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公开(公告)号：US07839239B2
公开(公告)日：2010-11-23
申请号：US12281985
申请日：2007-03-08
Applicant: Marc Sworowski , Patrice Gamand , Pascal Philippe
Inventor： Marc Sworowski , Patrice Gamand , Pascal Philippe
CPC classification number: H03H9/02259 , H03H3/0076 , H03H9/2405 , H03H9/505 , H03H2009/02503
Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.
Abstract translation: 本发明涉及一种具有至少一种模式形状的MEMS谐振器，包括：具有表面的衬底（2）和谐振器结构（1），其中谐振器结构（1）是衬底（2）的一部分， 其特征在于，所述谐振器结构（1）由第一封闭沟槽（3）和第二闭合沟槽（3）限定，所述第一沟槽（3）位于所述第二沟槽（3）的内部，从而形成管 结构（1），并且谐振器结构（1）仅在平行于表面（12）的方向上从基板（2）释放。 本发明还涉及制造这种MEMS谐振器的方法。
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公开(公告)号：US20100156569A1
公开(公告)日：2010-06-24
申请号：US12281985
申请日：2007-03-08
Applicant: Marc Sworowski , Patrice Gamand , Pascal Philippe
Inventor： Marc Sworowski , Patrice Gamand , Pascal Philippe
CPC classification number: H03H9/02259 , H03H3/0076 , H03H9/2405 , H03H9/505 , H03H2009/02503
Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.
Abstract translation: 本发明涉及一种具有至少一种模式形状的MEMS谐振器，包括：具有表面的衬底（2）和谐振器结构（1），其中谐振器结构（1）是衬底（2）的一部分， 其特征在于，所述谐振器结构（1）由第一封闭沟槽（3）和第二闭合沟槽（3）限定，所述第一沟槽（3）位于所述第二沟槽（3）的内部，从而形成管 结构（1），并且谐振器结构（1）仅在平行于表面（12）的方向上从基板（2）释放。 本发明还涉及制造这种MEMS谐振器的方法。
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