$M(c)method for producing inclined flank patterns by photolithography
    1.
    发明申请
    $M(c)method for producing inclined flank patterns by photolithography 审中-公开
    $ M(c)通过光刻制造斜面图案的方法

    公开(公告)号:US20070003839A1

    公开(公告)日:2007-01-04

    申请号:US10567889

    申请日:2004-08-05

    CPC classification number: B81C1/00103 B81C2201/0159 G03F7/70216

    Abstract: The invention concerns a photolithography fabrication method enabling production of patterns in a photosensitive resin layer (601) placed on a substrate (600). The patterns (607) comprise flanks (608) inclined relative to a normal ({right arrow over (n)}) relative to the principal plane of the substrate and which have an angle of inclination (θ) far greater to that of the patterns obtained according to the prior art. The invention also concerns a device allowing said method to be executed.

    Abstract translation: 本发明涉及能够在放置在基板(600)上的感光性树脂层(601)中制造图形的光刻制造方法。 图案(607)包括相对于法线倾斜的侧面(608)(相对于基底的主平面({n)的向右箭头),并且具有比根据 本发明还涉及允许执行所述方法的装置。

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