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1.发明授权公开(公告)号：US12032286B2
公开(公告)日：2024-07-09
申请号：US16902962
申请日：2020-06-16
Applicant: ASAHI KASEI KABUSHIKI KAISHA , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Hidenori Nagai , Shunsuke Furutani , Kanako Mizumura , Yuzo Kotani
CPC classification number: G03F7/0035 , B01L3/502707 , B81C1/00071 , G03F7/094 , G03F7/32 , B81C2201/0159
Abstract: Provided is a method for producing a multi-layered microchannel device by using a photosensitive resin laminate, which is highly-defined and excellent in dimension accuracy and enables channels to be partially hydrophilized or hydrophobilized, wherein the method comprises step (i) of sequentially carrying out (i-a) forming a first photosensitive resin layer on a substrate, (i-b) light-exposing the first photosensitive resin layer, and (i-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a first channel pattern layer; and step (ii) of sequentially carrying out (ii-a) laminating a second photosensitive resin laminate on the first channel pattern layer formed in the step (i), (ii-b) light-exposing a photosensitive layer of the second photosensitive resin laminate, and (ii-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a second channel pattern layer.
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公开(公告)号：US11774437B2
公开(公告)日：2023-10-03
申请号：US17551674
申请日：2021-12-15
Applicant: Saudi Arabian Oil Company
Inventor： Dong Kyu Cha , Ahmed Gmira , Mohammed Badri AlOtaibi , Ali Abdallah Al-Yousef
CPC classification number: G01N33/2823 , B81B1/00 , B81C1/00531 , G01N13/00 , B81B2201/058 , B81B2203/0338 , B81C2201/0132 , B81C2201/0159
Abstract: A method of making a portion of a microfluidic channel includes lithographically patterning a first pattern into a first layer of photoresist disposed on a substrate, the first pattern representative of morphology of a reservoir rock; etching the first pattern into the substrate to form a patterned substrate; disposing a second layer of photoresist onto the patterned substrate; lithographically patterning a second pattern into the second layer of photoresist to reveal portions of the patterned substrate; and depositing calcite onto the exposed portions of the patterned substrate.
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公开(公告)号：US09919916B2
公开(公告)日：2018-03-20
申请号：US15031957
申请日：2014-10-15
Applicant: Semitechnologies Limited
CPC classification number: B81C1/00111 , A61M37/0015 , A61M2037/003 , A61M2037/0053 , B81B2201/055 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , B81C2201/0176 , B81C2201/0181 , C23C16/402
Abstract: A method of forming microneedles where through a series of coating and etching processes microneedles are formed from a surface as an array. The microneedles have a bevelled end and bore which are formed as part of the process with no need to use a post manufacturing process to finish the microneedle.
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公开(公告)号：US20170247252A1
公开(公告)日：2017-08-31
申请号：US15444086
申请日：2017-02-27
Applicant: SMARTTIP BV
Inventor： Edin Sarajlic
IPC: B81C1/00
CPC classification number: B81C1/0015 , A61B5/150022 , A61B5/150282 , A61B5/150396 , A61B5/150511 , A61B5/150519 , A61B5/150984 , A61B5/15142 , A61M37/0015 , B81B2201/057 , B81B2201/12 , B81B2203/0118 , B81B2203/0353 , B81C1/00087 , B81C1/00111 , B81C1/00119 , B81C2201/0132 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , C01B21/0687
Abstract: A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.
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公开(公告)号：US09733185B2
公开(公告)日：2017-08-15
申请号：US13675685
申请日：2012-11-13
Applicant: Princeton University
Inventor： Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
IPC: G01N35/02 , G01N33/00 , C12M1/36 , C12M3/00 , G01N21/64 , B01L3/00 , B81C1/00 , B82Y30/00 , G01N33/487 , G03F7/20
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
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Patent Agency Ranking
公开(公告)号：US09708180B2
公开(公告)日：2017-07-18
申请号：US14684700
申请日：2015-04-13
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe
CPC classification number: B81C1/00325 , B81B3/0072 , B81B2201/0257 , B81C1/00158 , B81C1/00182 , B81C2201/013 , B81C2201/0159 , B81C2201/0198
Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.
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公开(公告)号：US20160264408A1
公开(公告)日：2016-09-15
申请号：US15031957
申请日：2014-10-15
Applicant: Swansea University
CPC classification number: B81C1/00111 , A61M37/0015 , A61M2037/003 , A61M2037/0053 , B81B2201/055 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , B81C2201/0176 , B81C2201/0181 , C23C16/402
Abstract: A method of forming microneedles where through a series of coating and etching processes microneedles are formed from a surface as an array. The microneedles have a bevelled end and bore which are formed as part of the process with no need to use a post manufacturing process to finish the microneedle.
Abstract translation: 一种形成微针的方法，其中通过一系列涂层和蚀刻处理微针从表面形成为阵列。 微针具有倾斜的端部和孔，其形成为该过程的一部分，而不需要使用后制造工艺来完成微针。
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公开(公告)号：US20160240882A1
公开(公告)日：2016-08-18
申请号：US15027065
申请日：2014-10-02
Inventor： Christophe Lethien , Pascal Tilmant , Etienne Eustache , Nathalie Rolland , Thierry Brousse
IPC: H01M10/02 , B81B1/00 , H01M10/0585 , B81C1/00
CPC classification number: H01M10/02 , B81B1/002 , B81B2203/0315 , B81B2203/0361 , B81C1/00047 , B81C1/00111 , B81C2201/0112 , B81C2201/013 , B81C2201/0159 , H01G11/70 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M10/0585 , H01M2220/30 , Y02E60/13
Abstract: A microstructured substrate includes a plurality of at least one elementary microstructure. An electrical storage device, and more particularly an all-solid-state battery, can include the microstructured substrate.
Abstract translation: 微结构化衬底包括多个至少一个基本微结构。 电存储装置，特别是全固态电池，可以包括微结构化基片。
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9.发明申请MEMS Device with Polymer Layer, System of a MEMS Device with a Polymer Layer, Method of Making a MEMS Device with a Polymer Layer 审中-公开具有聚合物层的MEMS器件，具有聚合物层的MEMS器件的系统，制备具有聚合物层的MEMS器件的方法公开(公告)号：US20150210542A1
公开(公告)日：2015-07-30
申请号：US14684700
申请日：2015-04-13
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe
IPC: B81C1/00
CPC classification number: B81C1/00325 , B81B3/0072 , B81B2201/0257 , B81C1/00158 , B81C1/00182 , B81C2201/013 , B81C2201/0159 , B81C2201/0198
Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.
Abstract translation: 示出了MEMS器件，制造MEMS器件的方法和MEMS器件的系统。 在一个实施例中，MEMS器件包括第一聚合物层，设置在第一聚合物层上的MEMS衬底和由MEMS衬底支撑的MEMS结构。 MEMS器件还包括设置在MEMS衬底中的第一开口和设置在第一聚合物层中的第二开口。
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公开(公告)号：US08333934B2
公开(公告)日：2012-12-18
申请号：US11536178
申请日：2006-09-28
Applicant: Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
Inventor： Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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