Synergistic fungicidal mixture of captafol and thiabendazol
    1.
    发明授权
    Synergistic fungicidal mixture of captafol and thiabendazol 失效
    captafol和噻菌灵的协同杀真菌混合物

    公开(公告)号:US4092422A

    公开(公告)日:1978-05-30

    申请号:US670815

    申请日:1976-03-26

    CPC classification number: C07D417/04

    Abstract: A fungicide mixture for combatting stem-breaking diseases and spike or ear diseases in cereals and corn, comprising from 50 to 90 percent by weight of N-(1,1,2,2-tetrachloroethylthio)-3a,4,7,7a-tetrahydrophthalimide and from 50 to 10 percent by weight of 2-(4'-thiazolyl)-benzimidazole, based on the total weight of the two components.

    Abstract translation: 一种用于对抗谷物和玉米中的破坏性疾病和穗状或耳朵疾病的杀真菌剂混合物,其包含50至90重量%的N-(1,1,2,2-四氯乙硫基)-3a,4,7,7a- 四氢邻苯二甲酰亚胺和50至10重量%的2-(4'-噻唑基) - 苯并咪唑,基于两种组分的总重量。

    Semiconductor device for converting light into electric energy
    3.
    发明授权
    Semiconductor device for converting light into electric energy 失效
    用于将光转换成电能的半导体器件

    公开(公告)号:US4620058A

    公开(公告)日:1986-10-28

    申请号:US188725

    申请日:1980-09-19

    CPC classification number: H01L31/03921 H01L31/075 Y02E10/548

    Abstract: A semiconductor device for converting light into electric energy comprises at least one layer of amorphous silicon with a surface thereof which is intended to be exposed to light covered by a cover layer of polycrystalline silicon. The use of the polycrystalline silicon increases the current yield in the blue light range of the solar spectrum. A method of producing such a semiconductor device is also disclosed.

    Abstract translation: 用于将光转换成电能的半导体器件包括至少一层非晶硅,其表面具有暴露于由多晶硅覆盖层覆盖的光的表面。 多晶硅的使用增加了太阳光谱的蓝光范围内的电流产量。 还公开了一种制造这种半导体器件的方法。

    Opto-electrical device made of silicon for detecting infrared light
    5.
    发明授权
    Opto-electrical device made of silicon for detecting infrared light 失效
    由硅制成的光电器件用于检测红外光

    公开(公告)号:US4586069A

    公开(公告)日:1986-04-29

    申请号:US529491

    申请日:1983-09-06

    CPC classification number: H01L27/14649 H01L31/108

    Abstract: An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.

    Abstract translation: 肖特基势垒型红外检测元件的灵敏度约为8〜12微米。 为此目的,硅衬底(1)具有掺杂密度在5×1018至5×1019(原子/ cm3)范围内且厚度在50至200埃范围内的高掺杂的p +硅表面层(3)。 在该层(3)的顶部,沉积例如铂的金属层(2)并部分合金化成层(3)以形成PtSi。 这样的元件排列成阵列,并且可以与在其他光谱范围(例如3至5微米)和/或可见光谱范围内具有其灵敏度的其它检测器元件组合。

    Method for manufacturing semiconductor elements from amorphous silicon
    6.
    发明授权
    Method for manufacturing semiconductor elements from amorphous silicon 失效
    从非晶硅制造半导体元件的方法

    公开(公告)号:US4369205A

    公开(公告)日:1983-01-18

    申请号:US195751

    申请日:1980-10-10

    Abstract: A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.

    Abstract translation: 一种用于制造将光转换成电能的非晶硅的半导体元件的方法和装置,包括向容器提供硅化合物,使电场通过该容器,足以产生在容器中具有自由电子的辉光放电以沉淀非晶硅 从硅化合物到容器中的衬底上,并且在容器中提供基本上横向于电场的磁场,并且具有足以使自由电子沿着衬底的表面上的封闭路径传导的量级。

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