Abstract:
A fungicide mixture for combatting stem-breaking diseases and spike or ear diseases in cereals and corn, comprising from 50 to 90 percent by weight of N-(1,1,2,2-tetrachloroethylthio)-3a,4,7,7a-tetrahydrophthalimide and from 50 to 10 percent by weight of 2-(4'-thiazolyl)-benzimidazole, based on the total weight of the two components.
Abstract:
A laser system generates read, green and blue beams from a single laser beam generated by an IR continuous-wave laser using rare-earth or transition elements. Semiconductor diodes are used to excite IR continuous-wave laser and simple passive non-linear frequency conversion is used to generate the red, green and blue effective beams.
Abstract:
A semiconductor device for converting light into electric energy comprises at least one layer of amorphous silicon with a surface thereof which is intended to be exposed to light covered by a cover layer of polycrystalline silicon. The use of the polycrystalline silicon increases the current yield in the blue light range of the solar spectrum. A method of producing such a semiconductor device is also disclosed.
Abstract:
A micromechanical structure with cavities, containers, openings, canals, depressions, humps or the like for examinations of sample substances for possible changes of physical and/or chemical properties with targeted evaluation and documentation for the purposes of biotechnology, gene technology, cell and immune research and other medical, agricultural and environment research, where the structure consists of semiconducting material (of the group III to V of the elements of the periodic system) or contain the latter or glass or ceramic, diamond, or carbon and is made by a masking technique, especially by a chemical etching technique.
Abstract:
An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.
Abstract:
A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.