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    ETCHING METHOD
    2.
    发明申请
    ETCHING METHOD 有权

    公开(公告)号：US20250154409A1

    公开(公告)日：2025-05-15

    申请号：US18839049

    申请日：2022-12-13

    Applicant: Resonac Corporation

    Inventor： Atsushi SUZUKI

    IPC: C09K13/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

    Abstract: A low-temperature etching method including an etching step of setting the temperature of a member to be etched having an etching object containing silicon to 0° C. or less, bringing an etching gas containing an etching compound into contact with the member to be etched, and etching the etching object. The etching gas contains or does not contain high-boiling-point impurities, the high-boiling-point impurities being compounds having at least one type of atom among a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a hydrogen atom, and an oxygen atom in the molecule and having a boiling point of 20° C. or more under a pressure of 101 kPa, and, when the etching gas contains the high-boiling-point impurities, the total concentration of all types of the contained high-boiling-point impurities is 500 ppm by volume or less.

    METHOD FOR FORMING DEPOSITION FILM
    6.
    发明申请
    METHOD FOR FORMING DEPOSITION FILM 有权

    公开(公告)号：US20250118556A1

    公开(公告)日：2025-04-10

    申请号：US18714649

    申请日：2022-10-07

    Applicant: Resonac Corporation

    Inventor： Daisuke SATO ,  Yuki OKA ,  Moe TANIWAKI

    IPC: H01L21/027

    Abstract: Provided is a method for forming a deposition film, with which a deposition film having improved uniformity of a film thickness can be formed. The method for forming a deposition film is a method for forming a deposition film on a substrate (21) on which a pattern (22) is formed, and the method includes a deposition step of placing the substrate (21) on an electrode and applying bias power to the electrode to form a deposition film (40) on the substrate (21) using plasma obtained by plasma-processing a deposition gas. A material constituting the pattern (22) is at least one of a carbon-containing material, a silicon-containing material, and a metal-containing material. In addition, the deposition gas contains unsaturated halon. The unsaturated halon is an unsaturated compound which has a fluorine atom, a bromine atom, and a carbon atom in a molecule and has 2 or 3 carbon atoms. Further, a power density of the bias power applied to the electrode is more than 0 W/cm2 and 0.5 W/cm2 or less.

    ELECTRODE BINDER FOR BIOFUEL CELL
    7.
    发明申请
    ELECTRODE BINDER FOR BIOFUEL CELL 有权

    公开(公告)号：US20250112248A1

    公开(公告)日：2025-04-03

    申请号：US18842848

    申请日：2024-03-27

    Applicant: Resonac Corporation

    Inventor： Mitsuru HANASAKI ,  Ryohsuke Ikehata

    IPC: H01M4/86 ,  H01M8/16

    Abstract: Provided is an electrode binder for a biofuel cell, which can provide an electrode slurry that has a low environmental load, a conductive material of which being good in dispersibility, and is suitable for screen printing and allows production of a biofuel cell that exhibits good output characteristics. The electrode binder for a biofuel cell according to the present invention includes a polymer (A) having a first structural unit derived from a nonionic ethylenically unsaturated monomer (a1), a second structural unit derived from an anionic ethylenically unsaturated monomer (a2), and a third structural unit derived from a crosslinking agent (a3), and the crosslinking agent (a3) has two or more ethylenically unsaturated bonds in one molecule.

    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING SYSTEM, PROGRAM, AND ISING MODEL CREATION SUPPORT METHOD
    10.
    发明申请
    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING SYSTEM, PROGRAM, AND ISING MODEL CREATION SUPPORT METHOD 有权

    公开(公告)号：US20250068973A1

    公开(公告)日：2025-02-27

    申请号：US18725246

    申请日：2023-06-29

    Applicant: Resonac Corporation

    Inventor： Suguru SAKAGUCHI ,  Kohsuke KAKUDA ,  Yoshishige OKUNO

    IPC: G06N20/00

    Abstract: With respect to an information processing device that supports creation of an Ising model for causing an annealing-type optimization machine to solve an optimum solution search problem, the information processing device includes a transforming unit configured to binarize an explanatory variable included in a training data set created using a trained machine learning model; a training unit configured to train an Ising model by performing machine learning with a relationship between the binarized explanatory variable and a predicted value of the training data set; and an output unit configured to output the trained Ising model.

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