公开(公告)号：US20120145442A1

公开(公告)日：2012-06-14

申请号：US12965192

申请日：2010-12-10

Applicant: Debabrata Gupta ,  Yukio Hashimoto ,  Ilyas Mohammed ,  Laura Mirkarimi ,  Rajesh Katkar

Inventor： Debabrata Gupta ,  Yukio Hashimoto ,  Ilyas Mohammed ,  Laura Mirkarimi ,  Rajesh Katkar

IPC: H05K1/18 ,  H05K1/11

CPC classification number: H01L24/14 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/528 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A microelectronic assembly includes a first surface and a first thin conductive element exposed at the first surface and having a face comprising first and second regions. A first conductive projection having a base connected to and covering the first region of the face extends to an end remote from the base. A first dielectric material layer covers the second region of the first thin element and contacts at least the base of the first conductive projection. The assembly further includes a second substrate having a second face and a second conductive projection extending away from the second face. A first fusible metal mass connects the first projection to the second projection and extends along an edge of the first projection towards the first dielectric material layer.

Abstract translation: 微电子组件包括第一表面和暴露在第一表面处并具有包括第一和第二区域的面的第一薄导电元件。 具有连接到并覆盖面的第一区域的基部的第一导电突起延伸到远离基部的一端。 第一介电材料层覆盖第一薄元件的第二区域并且至少与第一导电突起的基部接触。 组件还包括具有第二面的第二衬底和远离第二面延伸的第二导电突起。 第一可熔金属块将第一突起连接到第二突起并沿着第一突起的边缘朝着第一介电材料层延伸。

公开(公告)号：US08978247B2

公开(公告)日：2015-03-17

申请号：US13477586

申请日：2012-05-22

Applicant: Se Young Yang ,  Cyprian Emeka Uzoh ,  Michael Huynh ,  Rajesh Katkar

Inventor： Se Young Yang ,  Cyprian Emeka Uzoh ,  Michael Huynh ,  Rajesh Katkar

IPC: H01K3/10 ,  H01L21/48 ,  H01L21/683 ,  H01L23/498

CPC classification number: H01L21/6835 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16237 ,  H01L2924/014 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49165 ,  Y10T29/49208 ,  Y10T29/49213

Abstract: A method for forming an interconnection element having metalized structures includes forming metalized structures in an in-process unit that has a support material layer with first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure. The metalized structures are formed extending through the thickness of the support material layer. The method also includes etching at least a portion of the insulating layer to remove the handling structure from the in-process unit and further processing the in-process unit to form the interconnection element.

Abstract translation: 一种用于形成具有金属化结构的互连元件的方法包括在处理单元中形成金属化结构，所述处理单元具有支撑材料层，所述支撑材料层具有在其间限定厚度的第一和第二间隔开的表面，处理结构和绝缘层， 支撑材料层的第一表面的部分从处理结构的至少一部分。 金属化结构形成为延伸穿过支撑材料层的厚度。 该方法还包括蚀刻绝缘层的至少一部分以从处理单元去除处理结构，并进一步处理在处理单元以形成互连元件。

公开(公告)号：US08853558B2

公开(公告)日：2014-10-07

申请号：US12965192

申请日：2010-12-10

Applicant: Debabrata Gupta ,  Yukio Hashimoto ,  Ilyas Mohammed ,  Laura Mirkarimi ,  Rajesh Katkar

Inventor： Debabrata Gupta ,  Yukio Hashimoto ,  Ilyas Mohammed ,  Laura Mirkarimi ,  Rajesh Katkar

IPC: H05K1/16 ,  H01L25/10 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L24/14 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/528 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A microelectronic assembly includes a first surface and a first thin conductive element exposed at the first surface and having a face comprising first and second regions. A first conductive projection having a base connected to and covering the first region of the face extends to an end remote from the base. A first dielectric material layer covers the second region of the first thin element and contacts at least the base of the first conductive projection. The assembly further includes a second substrate having a second face and a second conductive projection extending away from the second face. A first fusible metal mass connects the first projection to the second projection and extends along an edge of the first projection towards the first dielectric material layer.

Abstract translation: 微电子组件包括第一表面和暴露在第一表面处并具有包括第一和第二区域的面的第一薄导电元件。 具有连接到并覆盖面的第一区域的基部的第一导电突起延伸到远离基部的一端。 第一介电材料层覆盖第一薄元件的第二区域并且至少与第一导电突起的基部接触。 组件还包括具有第二面的第二衬底和远离第二面延伸的第二导电突起。 第一可熔金属块将第一突起连接到第二突起并沿着第一突起的边缘朝着第一介电材料层延伸。

公开(公告)号：US20130313012A1

公开(公告)日：2013-11-28

申请号：US13477586

申请日：2012-05-22

Applicant: Se Young Yang ,  Cyprian Emeka Uzoh ,  Michael Huynh ,  Rajesh Katkar

Inventor： Se Young Yang ,  Cyprian Emeka Uzoh ,  Michael Huynh ,  Rajesh Katkar

IPC: H05K3/22 ,  H05K1/11

CPC classification number: H01L21/6835 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16237 ,  H01L2924/014 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49165 ,  Y10T29/49208 ,  Y10T29/49213

Abstract: A method for forming an interconnection element having metalized structures includes forming metalized structures in an in-process unit that has a support material layer with first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure. The metalized structures are formed extending through the thickness of the support material layer. The method also includes etching at least a portion of the insulating layer to remove the handling structure from the in-process unit and further processing the in-process unit to form the interconnection element.

Abstract translation: 一种用于形成具有金属化结构的互连元件的方法包括在处理单元中形成金属化结构，所述处理单元具有支撑材料层，所述支撑材料层具有在其间限定厚度的第一和第二间隔开的表面，处理结构和绝缘层， 支撑材料层的第一表面的部分从处理结构的至少一部分。 金属化结构形成为延伸穿过支撑材料层的厚度。 该方法还包括蚀刻绝缘层的至少一部分以从处理单元去除处理结构，并进一步处理在处理单元以形成互连元件。