公开(公告)号：US06770569B2

公开(公告)日：2004-08-03

申请号：US10210315

申请日：2002-08-01

Applicant: Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

Inventor： Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

IPC: H01L2131

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Abstract translation: 提供了一种用于制造MEMS结构（69）的方法。 根据该方法，提供具有沉积在其上的互连金属（53）的CMOS基板（51）。 通过等离子体辅助化学气相沉积（PACVD）在由硅和硅 - 锗合金组成的组中选择的材料在衬底上产生MEMS结构。 使用PACVD的低沉积温度允许这些材料用于集成CMOS工艺后端的MEMS制造。