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公开(公告)号：US12116271B2
公开(公告)日：2024-10-15
申请号：US17819409
申请日：2022-08-12
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
CPC classification number: B81C1/00365 , B81B7/0048 , C30B25/06 , C30B25/186 , C30B29/52 , C30B29/68 , B81B2207/99 , B81C2201/0133 , B81C2201/0177
Abstract: A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.
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公开(公告)号：US20200080185A1
公开(公告)日：2020-03-12
申请号：US16568064
申请日：2019-09-11
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
Abstract: Metallic materials with multimodal microstructure and methods of forming the metallic materials are disclosed. Exemplary methods allow for tuning of desired properties of the metallic materials and of devices including the metallic materials.
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公开(公告)号：US20240018643A1
公开(公告)日：2024-01-18
申请号：US18350138
申请日：2023-07-11
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
CPC classification number: C23C14/18 , C23C14/35 , C23C14/021 , C23C14/542 , C23C14/025
Abstract: Synthesis of high SFE nanotwinned metallic films with varying distributions of twin widths on a low SFE metallic layer using magnetron sputtering is disclosed. In various embodiments, a method for forming a nanotwinned metal film may include providing a single crystal silicon wafer, etching the single crystal silicon wafer, depositing a silver film onto the single crystal silicon wafer forming a silver buffer layer, and depositing a metallic film onto the silver buffer layer using sputtering at a controlled temperature.
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Patent Agency Ranking
公开(公告)号：US20230374653A1
公开(公告)日：2023-11-23
申请号：US18318096
申请日：2023-05-16
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
CPC classification number: C23C14/3485 , C23C14/185 , C23C14/54
Abstract: A method to grow metallic glass films utilizes engineering steep, spatially modulated compositional gradients during physical vapor deposition. This method can be used to enhance the thermal stability (increase glass transition and crystallization temperature) of thin film metallic glasses or can be used to produce amorphous films of metallic alloys that do not readily form a glassy structure.
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5.发明申请公开(公告)号：US20250019230A1
公开(公告)日：2025-01-16
申请号：US18901457
申请日：2024-09-30
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
Abstract: A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.
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6.发明申请公开(公告)号：US20230052052A1
公开(公告)日：2023-02-16
申请号：US17819409
申请日：2022-08-12
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
Abstract: A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.
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公开(公告)号：US20210032738A1
公开(公告)日：2021-02-04
申请号：US17068500
申请日：2020-10-12
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
Abstract: Metallic materials with multimodal microstructure and methods of forming the metallic materials are disclosed. Exemplary methods allow for tuning of desired properties of the metallic materials and of devices including the metallic materials.
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公开(公告)号：US10801100B2
公开(公告)日：2020-10-13
申请号：US16568064
申请日：2019-09-11
Applicant: Jagannathan Rajagopalan , Rohit Berlia
Inventor： Jagannathan Rajagopalan , Rohit Berlia
Abstract: Metallic materials with multimodal microstructure and methods of forming the metallic materials are disclosed. Exemplary methods allow for tuning of desired properties of the metallic materials and of devices including the metallic materials.
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