Tin amino-alkoxide complexes and process for preparing thereof
    1.
    发明授权
    Tin amino-alkoxide complexes and process for preparing thereof 有权
    锡氨基烷氧基络合物及其制备方法

    公开(公告)号:US08030507B2

    公开(公告)日:2011-10-04

    申请号:US12407526

    申请日:2009-03-19

    CPC classification number: C07F7/2204

    Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen. Sn[O-A-NR1R2]2  [Formula 1]

    Abstract translation: 本发明涉及新的锡氨基 - 烷氧化物络合物及其制备方法,精细新型的由式1表示的锡氨基 - 醇盐络合物,可用作锡和锡氧化物薄膜的前体和用于生产纳米粒子的前体 锡和锡氧化物颗粒及其制备方法。 在式1中,A是被卤素取代或未被取代的直链或支链(C2-C10)亚烷基; R1和R2独立地是被卤素取代或未被取代的直链或支链(C1-C7)烷基。 Sn [O-A-NR1R2] 2 [式1]

    NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF
    2.
    发明申请
    NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF 有权
    新型氨基烷基氧化物复合物及其制备方法

    公开(公告)号:US20090275770A1

    公开(公告)日:2009-11-05

    申请号:US12407526

    申请日:2009-03-19

    CPC classification number: C07F7/2204

    Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen. Sn[O-A-NR1R2]2  [Formula 1]

    Abstract translation: 本发明涉及新的锡氨基 - 烷氧化物络合物及其制备方法,精细新型的由式1表示的锡氨基 - 醇盐络合物,可用作锡和锡氧化物薄膜的前体和用于生产纳米粒子的前体 锡和锡氧化物颗粒及其制备方法。 在式1中,A是被卤素取代或未被取代的直链或支链(C2-C10)亚烷基; R1和R2独立地是被卤素取代或未被取代的直链或支链(C1-C7)烷基。 Sn [O-A-NR1R2] 2 [式1]

    Apparatus for hard baking photoresist pattern

    公开(公告)号:US06483068B2

    公开(公告)日:2002-11-19

    申请号:US09767260

    申请日:2001-01-23

    Applicant: Se-Jin Jang

    Inventor: Se-Jin Jang

    CPC classification number: H01L21/67115

    Abstract: A hard baking apparatus which is capable of evenly heating a semiconductor substrate when a photoresist pattern of the semiconductor substrate is hard baked. The apparatus for hard baking a photoresist pattern including: a chamber; a chuck installed at a lower portion in the chamber on which a semiconductor substrate is mounted; a heating unit installed at an upper portion in the chamber; and a unit installed at a lower portion of the heating unit for evenly distributing light.

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