公开(公告)号：US20100304521A1

公开(公告)日：2010-12-02

申请号：US12767791

申请日：2010-04-26

Applicant: Sean Michael Seutter ,  Suketu Parikh ,  Somnath Nag ,  Mehrdad M. Moslehi

Inventor： Sean Michael Seutter ,  Suketu Parikh ,  Somnath Nag ,  Mehrdad M. Moslehi

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for manufacturing three-dimensional thin-film solar cells using a template. The template comprises a template substrate comprising a plurality of three-dimensional surface features. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, selective emitter and base metallization regions are formed using a PECVD shadow mask process.

Abstract translation: 使用模板制造三维薄膜太阳能电池的方法。 模板包括包含多个三维表面特征的模板衬底。 通过在模板上形成牺牲层，然后沉积半导体层，选择性地蚀刻牺牲层，以及从模板中释放半导体层，形成三维薄膜太阳能电池基板。 然后，三维薄膜太阳能电池基板的选择部分掺杂有第一掺杂剂，而其它选择部分掺杂有第二掺杂剂。 接下来，使用PECVD阴影掩模处理形成选择性发射极和基极金属化区域。

公开(公告)号：US20100203243A1

公开(公告)日：2010-08-12

申请号：US12066384

申请日：2007-12-27

Applicant: Ruiping Wang ,  Ji Yue Tang ,  Zhibiao Zhao ,  Zhijun Fang ,  Kailash Pradhan ,  Sean Michael Seutter

Inventor： Ruiping Wang ,  Ji Yue Tang ,  Zhibiao Zhao ,  Zhijun Fang ,  Kailash Pradhan ,  Sean Michael Seutter

IPC: C23C16/44 ,  C23C16/42

CPC classification number: H01L21/02532 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/0262

Abstract: A method is provided for forming a poly-crystalline silicon film on a substrate. In one embodiment, the method comprises positioning a substrate within a processing chamber, heating the processing chamber to a deposition temperature, introducing a first silicon precursor into the processing chamber to form a buffer layer including crystal nuclei, introducing a second silicon precursor into the processing chamber to form a polysilicon film on the buffer layer, and then annealing the polysilicon film and the buffer layer.

Abstract translation: 提供了在基板上形成多晶硅膜的方法。 在一个实施例中，该方法包括将衬底定位在处理室内，将处理室加热到沉积温度，将第一硅前体引入处理室中以形成包括晶核的缓冲层，将第二硅前体引入到处理 在缓冲层上形成多晶硅膜，然后对多晶硅膜和缓冲层进行退火。