公开(公告)号：US07757371B2

公开(公告)日：2010-07-20

申请号：US11228967

申请日：2005-09-16

Applicant: Liang Liu ,  Jie Tang ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shuai-Ping Ge ,  Shou-Shan Fan

Inventor： Liang Liu ,  Jie Tang ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shuai-Ping Ge ,  Shou-Shan Fan

IPC: B21B1/46 ,  B21B13/22 ,  B22D11/126 ,  B22D11/128 ,  B23P17/00 ,  B23P25/00

CPC classification number: C25D1/08 ,  B82Y15/00 ,  B82Y30/00 ,  C04B35/62231 ,  C04B35/6224 ,  C04B35/62272 ,  C04B35/62286 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/526 ,  C04B2235/5264 ,  C23F4/00 ,  G01M3/007 ,  G01M3/207 ,  Y10T29/4998 ,  Y10T29/49982

Abstract: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.

Abstract translation: 用于制造参考泄漏的方法包括以下步骤：（a）制备基底; （b）在所述衬底上形成图案化催化剂层，所述图案化催化剂层包含一个或多个催化剂块; （c）通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; （d）在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料，玻璃材料和陶瓷材料之一的泄漏层; 和（e）移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。

公开(公告)号：US20060143895A1

公开(公告)日：2006-07-06

申请号：US11228967

申请日：2005-09-16

Applicant: Liang Liu ,  Jie Tang ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shuai-Ping Ge ,  Shou-Shan Fan

Inventor： Liang Liu ,  Jie Tang ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shuai-Ping Ge ,  Shou-Shan Fan

IPC: B21B1/46

CPC classification number: C25D1/08 ,  B82Y15/00 ,  B82Y30/00 ,  C04B35/62231 ,  C04B35/6224 ,  C04B35/62272 ,  C04B35/62286 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/526 ,  C04B2235/5264 ,  C23F4/00 ,  G01M3/007 ,  G01M3/207 ,  Y10T29/4998 ,  Y10T29/49982

Abstract: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.

Abstract translation: 用于制造参考泄漏的方法包括以下步骤：（a）制备基底; （b）在所述衬底上形成图案化催化剂层，所述图案化催化剂层包含一个或多个催化剂块; （c）通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; （d）在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料，玻璃材料和陶瓷材料之一的泄漏层; 和（e）移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。

公开(公告)号：US07814773B2

公开(公告)日：2010-10-19

申请号：US11361620

申请日：2006-02-24

Applicant: Liang Liu ,  Shuai-Ping Ge ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

Inventor： Liang Liu ,  Shuai-Ping Ge ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

IPC: G01N21/00

CPC classification number: G01M3/007

Abstract: A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

Abstract translation: 参考泄漏（10）包括第一基板（20），设置并接合在第一基板上的第二基板（40）和限定在第一和第二基板中的至少一个基板中的预定数量的泄漏通道（14）。 泄漏通道的倾斜壁由第一和第二基板中的至少一个的晶面形成，因此倾斜壁根据这样的晶面对齐。 还提供了制造参考泄漏的方法。

公开(公告)号：US20070235841A1

公开(公告)日：2007-10-11

申请号：US11214379

申请日：2005-08-29

Applicant: Shuai-ping Ge ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Shuai-ping Ge ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01L29/04

CPC classification number: H01L29/045 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673

Abstract: A silicon nanowire structure with controllable orientations is disclosed. The silicon nanowire structure includes a silicon wafer as a substrate having a crystal plane; a plurality of silicon nanowires extends from the silicon wafer along a plurality of oblique epitaxial directions of the substrate. The silicon nanowires are in a form of single crystalline nanowires. The crystal plane can be one of a (100) crystal plane, a (110) crystal plane, and a (111) crystal plane. A method for growing the silicon nanowire structure is also disclosed. The silicon nanowire structures have potential applications in nanoscale photonics and/or electronic devices. The method uses a silicon wafer having a crystal plane as a substrate. By controlling a local concentration of silicon derived from SiCl4 vapor at the reaction zone, silicon nanowires with controlled orientations can be grown from the silicon wafer.

Abstract translation: 公开了具有可控取向的硅纳米线结构。 硅纳米线结构包括具有晶面的作为基板的硅晶片; 多个硅纳米线沿着衬底的多个倾斜外延方向从硅晶片延伸。 硅纳米线是单晶纳米线的形式。 晶面可以是（100）晶面，（110）晶面和（111）晶面之一。 还公开了一种用于生长硅纳米线结构的方法。 硅纳米线结构在纳米尺度光子学和/或电子器件中具有潜在的应用。 该方法使用具有晶面的硅晶片作为基板。 通过控制来自反应区的SiCl 4 H 4蒸气的硅的局部浓度，可以从硅晶片生长具有受控取向的硅纳米线。

公开(公告)号：US20060196245A1

公开(公告)日：2006-09-07

申请号：US11361620

申请日：2006-02-24

Applicant: Liang Liu ,  Shuai-Ping Ge ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

Inventor： Liang Liu ,  Shuai-Ping Ge ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

IPC: G01N33/00

CPC classification number: G01M3/007

Abstract: A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

Abstract translation: 参考泄漏（10）包括第一基板（20），设置并接合在第一基板上的第二基板（40）和限定在第一和第二基板中的至少一个基板中的预定数量的泄漏通道（14）。 泄漏通道的倾斜壁由第一和第二基板中的至少一个的晶面形成，因此倾斜壁根据这样的晶面对齐。 还提供了制造参考泄漏的方法。