THIN FILM TRANSISTOR ARRAY PANEL
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20130105803A1

    公开(公告)日:2013-05-02

    申请号:US13616165

    申请日:2012-09-14

    CPC classification number: H01L27/124

    Abstract: A thin film transistor array panel includes: a data line which extends in a column direction and transfers a data voltage; a first pixel electrode and a second pixel electrode connected to the data line and adjacent in a row direction; a first thin film transistor connected to the first pixel electrode and the data line, and including a first source electrode and a first drain electrode; and a second thin film transistor connected to the second pixel electrode and the data line, and including a second source electrode and a second drain electrode. The first pixel electrode is at the right of the data line, the second pixel electrode is at the left of the data line, and relative positions of the first source electrode and the first drain electrode are the same as relative positions of the second source electrode and the second drain electrode.

    Abstract translation: 薄膜晶体管阵列面板包括:沿列方向延伸并传送数据电压的数据线; 连接到数据线并且在行方向上相邻的第一像素电极和第二像素电极; 连接到第一像素电极和数据线的第一薄膜晶体管,并且包括第一源极和第一漏极; 以及连接到第二像素电极和数据线的第二薄膜晶体管,并且包括第二源电极和第二漏电极。 第一像素电极位于数据线的右侧,第二像素电极位于数据线的左侧,第一源电极和第一漏电极的相对位置与第二源极的相对位置相同 和第二漏电极。

    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    显示面板及其制造方法

    公开(公告)号:US20120194451A1

    公开(公告)日:2012-08-02

    申请号:US13239182

    申请日:2011-09-21

    CPC classification number: G06F3/041 G06F3/045 G06F2203/04103

    Abstract: The display panel includes an opposite substrate and an array substrate. The opposite substrate includes a first substrate including a first surface and a second surface opposite to the first surface, a first wire electrode formed on the first surface, a first transparent electrode formed on the first surface and partially overlapping with the first wire electrode, and a common electrode formed on the second surface. The first wire on the first surface is formed before the first transparent electrode on the first surface. The array substrate includes a second substrate including a third surface facing the second surface, and a pixel layer formed on the third surface and facing the common electrode.

    Abstract translation: 显示面板包括相对的基板和阵列基板。 相对基板包括:第一基板,包括第一表面和与第一表面相对的第二表面;形成在第一表面上的第一线电极,形成在第一表面上并与第一线电极部分重叠的第一透明电极;以及 形成在第二表面上的公共电极。 第一表面上的第一线形成在第一表面上的第一透明电极之前。 阵列基板包括包括面向第二表面的第三表面的第二基板和形成在第三表面上并面向公共电极的像素层。

    Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
    7.
    发明授权
    Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter 失效
    具有碳纳米管膜的场致发射体,其制造方法以及使用场致发射体的场致发射显示装置

    公开(公告)号:US06648711B1

    公开(公告)日:2003-11-18

    申请号:US09592257

    申请日:2000-06-12

    Abstract: A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.

    Abstract translation: 提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体,其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。 形成在所述绝缘基板上的薄膜晶体管,所述薄膜晶体管具有半导体层,源极,漏极和栅电极,以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元 晶体管薄膜晶体管可以是共面型晶体管,交错型晶体管或反交错型晶体管。 与碳纳米管膜接触的漏电极的一部分的表面含有催化金属,其为镍或钴等过渡金属。 或者,漏电极本身可以由用于碳纳米管生长的催化金属形成。

    Thin film transistor array panel
    9.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US09136283B2

    公开(公告)日:2015-09-15

    申请号:US13616165

    申请日:2012-09-14

    CPC classification number: H01L27/124

    Abstract: A thin film transistor array panel includes: a data line which extends in a column direction and transfers a data voltage; a first pixel electrode and a second pixel electrode connected to the data line and adjacent in a row direction; a first thin film transistor connected to the first pixel electrode and the data line, and including a first source electrode and a first drain electrode; and a second thin film transistor connected to the second pixel electrode and the data line, and including a second source electrode and a second drain electrode. The first pixel electrode is at the right of the data line, the second pixel electrode is at the left of the data line, and relative positions of the first source electrode and the first drain electrode are the same as relative positions of the second source electrode and the second drain electrode.

    Abstract translation: 薄膜晶体管阵列面板包括:沿列方向延伸并传送数据电压的数据线; 连接到数据线并且在行方向上相邻的第一像素电极和第二像素电极; 连接到第一像素电极和数据线的第一薄膜晶体管,并且包括第一源极和第一漏极; 以及连接到第二像素电极和数据线的第二薄膜晶体管,并且包括第二源电极和第二漏电极。 第一像素电极位于数据线的右侧,第二像素电极位于数据线的左侧,第一源电极和第一漏电极的相对位置与第二源极的相对位置相同 和第二漏电极。

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