Abstract:
A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.
Abstract:
Invention teaches a method and system for characterizing grating profile data. One embodiment is a method for characterizing grating profile data by clustering the grating profile data space and associating profile shape data to each cluster. Another aspect of the present invention is a system for classifying grating profile data comprising a cluster generator for generating clusters of grating profiles, for associating profile shape data to each cluster, and for linking the associated profile shape data to the grating profiles belonging to each cluster. The present invention includes a method and a system for evaluating input grating profile by comparing the profile data from the closest matching grating profile library instance with a set of acceptable ranges of profile data for the application; flagging the input grating profile if the profile data is outside the set of acceptable ranges; and presenting the profile data and flags associated with the input grating profile. The system is scalable and may operate in a distributed manner utilizing networks.
Abstract:
A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.
Abstract:
A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.
Abstract:
The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
Abstract:
The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to determine shape, profile, and spectrum data information associated with an actual grating profile.
Abstract:
The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to determine shape, profile, and spectrum data information associated with an actual grating profile.
Abstract:
The present invention includes a method and system for identifying an underlying structure that achieves improved planarization characteristics of layers while minimizing introduction of random and/or systematic noise to the reflected metrology signal. One embodiment of the present invention is a method of designing underlying structures in a wafer with pads of varying sizes and varying loading factors, and selecting the design of pads that yield a reflected metrology signal closest to the calibration metrology signal and that meet preset standard planarization characteristics. Another embodiment is a method of designing underlying structures with random shapes of varying sizes and varying loading factors. Still another embodiment is the use of periodic structures of varying line-to-space ratios in one or more underlying layers of a wafer, the periodicity of the underlying periodic structure being positioned at an angle relative to the direction of periodicity of the target periodic structure of the wafer. The present invention also includes a system for selecting an underlying structure design that balances planarization and optical metrology objectives for a target structure comprising a wafer fabricator, a planarizer, a layer profiler, an optical metrology device, and a selector for the selecting the design of underlying structure that yields a reflected metrology signal closest to the calibration metrology signal and where the planarized surfaces meet preset standard planarization characteristics.