公开(公告)号：US08080931B2

公开(公告)日：2011-12-20

申请号：US12183614

申请日：2008-07-31

Applicant: Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

Inventor： Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

IPC: H01J1/00

CPC classification number: H01J1/316 ,  B82Y30/00 ,  C01G23/047 ,  C01G51/04 ,  C01G53/04 ,  C01P2004/64 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1295 ,  C23C30/00 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  Y10T428/26

Abstract: A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.

Abstract translation: 由在基板上形成的金属或铝合金制成的厚度为3nm〜50nm的导电膜，其中，所述金属或合金的密度与体积密度之比为0.2〜0.5，电阻率与 金属或合金的体电阻率为100〜100000。

公开(公告)号：US20090033223A1

公开(公告)日：2009-02-05

申请号：US12183614

申请日：2008-07-31

Applicant: Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

Inventor： Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

IPC: H01J17/49 ,  B32B5/00

CPC classification number: H01J1/316 ,  B82Y30/00 ,  C01G23/047 ,  C01G51/04 ,  C01G53/04 ,  C01P2004/64 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1295 ,  C23C30/00 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  Y10T428/26

Abstract: A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.

Abstract translation: 由在基板上形成的金属或铝合金制成的厚度为3nm〜50nm的导电膜，其中，所述金属或合金的密度与体积密度之比为0.2〜0.5，电阻率与 金属或合金的体电阻率为100〜100000。

公开(公告)号：US07547620B2

公开(公告)日：2009-06-16

申请号：US11214944

申请日：2005-08-31

Applicant: Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

Inventor： Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

IPC: H01L21/20

CPC classification number: H01J9/027 ,  G03F7/0047 ,  G03F7/405 ,  H01J2201/3165 ,  H05K3/105 ,  H05K2203/1105 ,  H05K2203/121

Abstract: A method for producing a film pattern comprises a step of forming a resin film on a substrate surface; a step of incorporating into the resin film a constituent of a conductive film or a semiconductor film; a step of irradiating the resin film with an ultraviolet light; and a step of heating the resin film at a temperature not lower than a decomposition temperature of the resin to form a conductive film or a semiconductor film on the substrate, whereby the resin does not easily generate decomposition residues to improve precision and quality of the produced film pattern.

Abstract translation: 膜图案的制造方法包括在基板表面上形成树脂膜的工序; 在树脂膜中引入导电膜或半导体膜的成分的步骤; 用紫外线照射树脂膜的步骤; 以及在树脂的分解温度以上的温度下加热树脂膜的步骤，在基板上形成导电膜或半导体膜，由此树脂不容易产生分解残留物，从而提高所制造的 电影模式。

公开(公告)号：US20060046208A1

公开(公告)日：2006-03-02

申请号：US11214944

申请日：2005-08-31

Applicant: Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

Inventor： Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

IPC: G03F7/00

CPC classification number: H01J9/027 ,  G03F7/0047 ,  G03F7/405 ,  H01J2201/3165 ,  H05K3/105 ,  H05K2203/1105 ,  H05K2203/121

Abstract: A method for producing a film pattern comprises a step of forming a resin film on a substrate surface; a step of incorporating into the resin film a constituent of a conductive film or a semiconductor film; a step of irradiating the resin film with an ultraviolet light; and a step of heating the resin film at a temperature not lower than a decomposition temperature of the resin to form a conductive film or a semiconductor film on the substrate, whereby the resin does not easily generate decomposition residues to improve precision and quality of the produced film pattern.