Abstract:
The invention relates to an electroluminescent display, illumination or indicating device and to its fabrication process. This device (1) comprises a substrate (2) coated with an electroluminescent unit (3) having two electrodes, namely an internal electrode (5) and an external electrode (6), between which a light-emitting structure (4) is placed, at least one of said electrodes being transparent to the emitted light, a protective plate (7) being assembled on the unit by means of an adhesive (7a). According to the invention, this adhesive covers an adhesion-promoter layer (10) which surmounts the unit, being deposited by ALD (atomic layer deposition) from precursors, and which is based on at least one inorganic compound compatible with the adhesive, a metallic reactive sublayer (9) capable of reacting with at least one of these precursors being inserted beneath and in contact with this adhesion-promoter layer, at least one dielectric intermediate layer (8) transparent to the emitted light being placed between the external electrode and the reactive sublayer in order to form, with said external electrode and said reactive sublayer, a resonant cavity.
Abstract:
An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device-has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer. The polymer layer is etched with a discontinuous geometry formed of segments that respectively surmount the structures and end beyond the structures in line with the beads.
Abstract:
The device includes at least one optoelectronic component positioned on a substrate and at least one transparent face. The component is covered by a packaging layer which includes at least one barrier layer and a moisture-reactive layer. The reactive layer includes a moisture-reactive material chosen from alkaline-earth metals, alkali metals and organo-metallic derivatives. The material can be positioned in the moisture-reactive layer in the form of a continuous layer or in the form of a plurality of nodules dispersed in an organic matrix.
Abstract:
The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0
Abstract:
An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer. The polymer layer is etched with a discontinuous geometry formed of segments that respectively surmount the structures and end beyond the structures in line with the beads.
Abstract:
The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0
Abstract:
The invention relates to an organic optoelectronic device, such as a display, lighting or signalling device, that is protected from the ambient air by a sealed encapsulation in the form of a thin film, and to a method for encapsulating such a device. An optoelectronic device (1) according to the invention is coated with a sealed multi-layer encapsulation structure (20) comprising alternating inorganic layers (21a to 26a) and organic layers (21b to 25b). According to the invention, the device is such that at least one of said organic layers consists of a crosslinked adhesive film (21b to 25b) based on a glue that can be crosslinked thermally or by electromagnetic radiation, the or each adhesive film having a thickness uniformly lower than 200 n, said thickness being obtained by passing the film, which is deposited and not yet cross-linked, through a vacuum, such that the total thickness of the encapsulation structure is minimised.
Abstract:
The invention relates to an electroluminescent display, illumination or indicating device and to its fabrication process. This device (1) comprises a substrate (2) coated with an electroluminescent unit (3) having two electrodes, namely an internal electrode (5) and an external electrode (6), between which a light-emitting structure (4) is placed, at least one of said electrodes being transparent to the emitted light, a protective plate (7) being assembled on the unit by means of an adhesive (7a). According to the invention, this adhesive covers an adhesion-promoter layer (10) which surmounts the unit, being deposited by ALD (atomic layer deposition) from precursors, and which is based on at least one inorganic compound compatible with the adhesive, a metallic reactive sublayer (9) capable of reacting with at least one of these precursors being inserted beneath and in contact with this adhesion-promoter layer, at least one dielectric intermediate layer (8) transparent to the emitted light being placed between the external electrode and the reactive sublayer in order to form, with said external electrode and said reactive sublayer, a resonant cavity.
Abstract:
The invention relates to a method for making an electronic display device (1) having a screen (3) covered by a protection plate, and to a substrate (2) covered by said screen for obtaining such a device. The method comprises the following steps: a) applying glue (10) at the non cross-linked state substantially on the entire surface of the screen and/or the assembling surface (11a) of the plate (11) following a deposit on the screen connection area (5) of at least one organic layer (15) for protecting the connection area from the glue; applying the assembling surface against the screen via the glue; c) emitting a radiation through the plate for cross-linking the glue; and d) removing a portion of the plate covering the connection area so that the latter can be electrically accessible, the protection layer being removed from the connection area upon said removal or during a further surface processing step. According to the invention, the protection layer contains at least one organic compound selected from the group comprising compounds derived from diamines and organometallic complexes with heterocycles.
Abstract:
The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n≧1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . . , Cn surrounds the layer C1, . . . , Cn−1 of the immediately underlying stack, such that the layer or each layer C1, . . . , Cn passivates the film F1, Fn and laterally protects the underlying active area from the developing solutions and solvents used for etching said layer C1, . . . , Cn.