公开(公告)号：US20040160798A1

公开(公告)日：2004-08-19

申请号：US10680508

申请日：2003-10-06

Applicant: Unity Semiconductor Inc.

Inventor： Darrell Rinerson ,  Christophe J. Chevallier

IPC: G11C017/00

CPC classification number: G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3468 ,  G11C2013/0066 ,  G11C2213/31

Abstract: A programming circuit is provided. As a conductive memory cell is programmed, its resistance changes. The provided programming circuit monitors the changing resistance while programming the memory cell. The programming circuit can be used to only program the memory cell for as long as programming is actually needed. Additionally, the programming circuit can be used to only program the memory cell when it has a value that needs to be changed.

Abstract translation: 提供了编程电路。 由于导电存储单元被编程，其电阻变化。 所提供的编程电路在编程存储器单元时监视变化的电阻。 只要编程实际需要，编程电路就可以用于只对存储单元进行编程。 此外，编程电路可以用于仅当存储单元具有需要改变的值时对其进行编程。

公开(公告)号：US20040159828A1

公开(公告)日：2004-08-19

申请号：US10665882

申请日：2003-09-19

Applicant: Unity Semiconductor, Inc.

Inventor： Darrell Rinerson ,  Wayne Kinney ,  John Sanchez ,  Steven W. Longcor ,  Steve Kuo-Ren Hsia ,  Edmond R. Ward ,  Christophe J. Chevallier

IPC: H01L047/00

CPC classification number: G11C13/003 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2418 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/165

Abstract: A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves the memory properties of the entire memory device.

Abstract translation: 提供了使用处理接口的多电阻状态元素。 存储插头包括夹着多电阻状态元件的至少两个电极。 在电极/多电阻状态元件接口上使用不同的处理可改善整个存储器件的存储器特性。