公开(公告)号：US09831865B2

公开(公告)日：2017-11-28

申请号：US14774026

申请日：2013-04-05

Applicant: ABB Schweiz AG

Inventor： Annika Lokrantz ,  Kristoffer Nilsson ,  Ying Jiang-Häfner ,  Christer Sjöberg ,  Lars Döfnäs ,  Wim Van-Der-Merwe

IPC: H02M1/08 ,  H03K17/567 ,  H03K17/18 ,  H02M7/537 ,  H02M1/00 ,  H03K17/687

CPC classification number: H03K17/567 ,  H02M7/537 ,  H02M2001/0054 ,  H02M2001/0058 ,  H03K17/18 ,  H03K17/6871 ,  H03K2217/0027 ,  H03K2217/0036

Abstract: A method for controlling a first and a second reverse-conducting insulated gate bipolar transistor (RC-IGBT), electrically connected in series, is disclosed. A collector of the first RC-IGBT is electrically connected to a positive pole of a direct current voltage source, and an emitter of the second RC-IGBT is electrically connected to a negative pole of the DC voltage source. Further, an emitter of the first RC-IGBT is electrically connected to a collector of the second RC-IGBT to form an alternating current terminal. A gate voltage is applied to respective gates of the first and second RC-IGBTs, wherein the gate voltage is controlled based on a magnitude and a direction of an output current on the AC terminal and on a command signal alternating between a first and a second value.