公开(公告)号：US10121909B2

公开(公告)日：2018-11-06

申请号：US15066561

申请日：2016-03-10

Applicant: ABB Technology AG

Inventor： Renato Minamisawa ,  Andrei Mihaila ,  Vinoth Sundaramoorthy

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/861 ,  H01L21/02 ,  H01L21/04 ,  H01L21/265 ,  H01L21/283 ,  H01L21/306 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66 ,  H01L29/06

Abstract: It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1·1016 cm−3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·1016cm−3 and 1·1019 cm−3 and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 μm.

公开(公告)号：US20160268448A1

公开(公告)日：2016-09-15

申请号：US15066561

申请日：2016-03-10

Applicant: ABB Technology AG

Inventor： Renato Minamisawa ,  Andrei Mihaila ,  Vinoth Sundaramoorthy

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L21/04 ,  H01L21/283 ,  H01L21/306 ,  H01L21/265 ,  H01L29/16 ,  H01L21/02

CPC classification number: H01L29/872 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/861

Abstract: It is the object of the invention to provide a power semiconductor rectifier with a low on-state voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration below 1-1016 cm−3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1-1016 cm−3 and 1-1019 cm−3, and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation layer of at least 1 nm and less than 0.2 μm.

Abstract translation: 本发明的目的是提供具有低导通状态电压和高阻塞能力的功率半导体整流器。 该目的通过功率半导体整流器来实现，该功率半导体整流器包括：具有第一导电类型的漂移层; 以及与漂移层形成肖特基接触的电极层，其中漂移层包括峰值净掺杂浓度低于1-1016cm-3的基底层和与电极层直接接触形成的阻挡调制层 所述肖特基接触的至少一部分，其中所述势垒调制层的净掺杂浓度在1-1016cm-3和1-1019cm-3之间的范围内，并且其中所述势垒调制层的层厚度为 垂直于电极层和屏障调制层之间的界面的方向至少为1nm且小于0.2μm。

公开(公告)号：US20160190126A1

公开(公告)日：2016-06-30

申请号：US14971206

申请日：2015-12-16

Applicant: ABB Technology AG

Inventor： Friedhelm Bauer ,  Andrei Mihaila

IPC: H01L27/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872

CPC classification number: H01L27/0814 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/872

Abstract: A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.

Abstract translation: 一种具有第一和第二漂移层部分的结屏障肖特基整流器，其中第一部分的峰值净掺杂浓度比第二部分的最小净掺杂浓度低至少两倍。 对于每个发射极区域，第一部分包括与相应的发射极区域接触以在第一部分和相应的发射极区域之间形成pn结的层，其中该层在垂直于 第一部分和相应的发射极区域至少为0.1μm。 由于静电力的降低，JBS整流器在较低的正向偏压下具有从单极性到双极性导通模式的转变，否则会削弱电子在正向偏置条件下朝向发射极区域的传输，并且具有减少的回跳现象。