公开(公告)号：US10121909B2

公开(公告)日：2018-11-06

申请号：US15066561

申请日：2016-03-10

Applicant: ABB Technology AG

Inventor： Renato Minamisawa ,  Andrei Mihaila ,  Vinoth Sundaramoorthy

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/861 ,  H01L21/02 ,  H01L21/04 ,  H01L21/265 ,  H01L21/283 ,  H01L21/306 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66 ,  H01L29/06

Abstract: It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1·1016 cm−3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·1016cm−3 and 1·1019 cm−3 and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 μm.

公开(公告)号：US20160313191A1

公开(公告)日：2016-10-27

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Lulian Nistor ,  Gerold Knapp

IPC: G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

公开(公告)号：US09683898B2

公开(公告)日：2017-06-20

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Iulian Nistor ,  Gerold Knapp

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

公开(公告)号：US20160268448A1

公开(公告)日：2016-09-15

申请号：US15066561

申请日：2016-03-10

Applicant: ABB Technology AG

Inventor： Renato Minamisawa ,  Andrei Mihaila ,  Vinoth Sundaramoorthy

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L21/04 ,  H01L21/283 ,  H01L21/306 ,  H01L21/265 ,  H01L29/16 ,  H01L21/02

CPC classification number: H01L29/872 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/861

Abstract: It is the object of the invention to provide a power semiconductor rectifier with a low on-state voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration below 1-1016 cm−3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1-1016 cm−3 and 1-1019 cm−3, and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation layer of at least 1 nm and less than 0.2 μm.

Abstract translation: 本发明的目的是提供具有低导通状态电压和高阻塞能力的功率半导体整流器。 该目的通过功率半导体整流器来实现，该功率半导体整流器包括：具有第一导电类型的漂移层; 以及与漂移层形成肖特基接触的电极层，其中漂移层包括峰值净掺杂浓度低于1-1016cm-3的基底层和与电极层直接接触形成的阻挡调制层 所述肖特基接触的至少一部分，其中所述势垒调制层的净掺杂浓度在1-1016cm-3和1-1019cm-3之间的范围内，并且其中所述势垒调制层的层厚度为 垂直于电极层和屏障调制层之间的界面的方向至少为1nm且小于0.2μm。