公开(公告)号：US11177188B1

公开(公告)日：2021-11-16

申请号：US17019333

申请日：2020-09-13

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/34 ,  H01L23/28 ,  H01L21/00 ,  H05K7/20 ,  H05K7/18 ,  H01L23/367 ,  H01L23/31 ,  H01L25/07 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/495

Abstract: A chip packaging structure includes a heat dissipation substrate, a pre-molded chipset, an interconnection and a second encapsulant. The pre-molded chipset is located on the heat dissipation substrate. The interconnection is located in the packaging structure and electrically connects the heat dissipation substrate and the pre-molded chipset. The second encapsulant covers part of the heat dissipation substrate, part or all of the interconnection, and part or all of the pre-molded chipset. The pre-molded chipset includes a thermally conductive substrate, at least two chips, a patterned circuit, and a first encapsulant. The patterned circuit is located in the pre-molded chipset. At least two chips are electrically connected by the patterned circuit. The first encapsulant covers at least two chips and part or all of the patterned circuit. A manufacturing method of a chip packaging structure is also provided.

公开(公告)号：US20210050320A1

公开(公告)日：2021-02-18

申请号：US16671197

申请日：2019-11-01

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L23/498 ,  H01L23/373

Abstract: A package structure for power devices includes a heat dissipation insulating substrate, a plurality of power devices, at least one conductive clip, and a heat dissipation baseplate. The heat dissipation insulating substrate has a first surface and a second surface opposite thereto, and the power devices form a bridge circuit topology and are disposed on the first surface, wherein active regions of at least one of the power devices are flip-chip bonded to the first surface. The conductive clip is configured to electrically connect at least one of the power devices to the first surface, and the heat dissipation baseplate is disposed at the second surface of the heat dissipation insulating substrate.

公开(公告)号：US20250096086A1

公开(公告)日：2025-03-20

申请号：US18495688

申请日：2023-10-26

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/07

Abstract: A semiconductor module includes a substrate, at least one chip, at least one signal assembly, a first molding compound, and a second molding compound. The chip is disposed on the substrate and electrically connected to the substrate. The signal assembly is disposed on the substrate in a normal direction of the substrate and electrically connected to the substrate. The first molding compound is disposed on the substrate. The first molding compound at least covers the chip and has at least one opening, and the opening exposes the signal assembly. The second molding compound is disposed on the substrate and fills the opening. The second molding compound is located between the signal assembly and the first molding compound, and covers the signal assembly. At least one contact interface is formed between the second molding compound and the first molding compound.

公开(公告)号：US20190393111A1

公开(公告)日：2019-12-26

申请号：US16124199

申请日：2018-09-07

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/28 ,  H01L23/532 ,  H01L23/373

Abstract: A power device package structure including a first substrate, a second substrate, at least one power device, and a package is provided. A heat conductivity of the first substrate is greater than 200 Wm−1K−1. The power device is disposed on the first substrate, and the second substrate is disposed under the first substrate. A heat capacity of the second substrate is greater than that of the first substrate. The package encapsulates the first substrate, the second substrate, and the power device.

公开(公告)号：US20240282652A1

公开(公告)日：2024-08-22

申请号：US18191883

申请日：2023-03-29

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/31 ,  H01L23/00

CPC classification number: H01L23/3107 ,  H01L24/48 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1811

Abstract: Disclosed are an energy conversion module and an energy conversion device. The energy conversion module includes an encapsulation structure and an integrated module packaged therein, the integrated module includes a trace, a power chip, a transistor control element and an energy storage device. The trace includes at least two electrodes, one is exposed from a first surface of the encapsulation structure, and the other is exposed from a second surface of the encapsulation structure. The first surface is opposite to the second surface. The power chip is respectively connected to the two electrodes of the trace. The transistor control element controls the power chip to perform energy conversion through the trace. The energy storage device supplies energy to the transistor control element through the trace.

公开(公告)号：US10804189B2

公开(公告)日：2020-10-13

申请号：US16153831

申请日：2018-10-08

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai

IPC: H01L23/36 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367

Abstract: A package structure of a power device includes a substrate having a first circuit, a first power device, a second power device, an insulation film having a second circuit, at least one electronic component, and a package. The first power device, the second power device, and the insulation film are disposed on the substrate. The first power device and the second power device are directly electrically connected to each other via the first circuit of the substrate. The electronic component is disposed on the insulation film. The package encapsulates the substrate, the first power device, the second power device, and the electronic component.

公开(公告)号：US20200013705A1

公开(公告)日：2020-01-09

申请号：US16153831

申请日：2018-10-08

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/367

Abstract: A package structure of a power device includes a substrate having a first circuit, a first power device, a second power device, an insulation film having a second circuit, at least one electronic component, and a package. The first power device, the second power device, and the insulation film are disposed on the substrate. The first power device and the second power device are directly electrically connected to each other via the first circuit of the substrate. The electronic component is disposed on the insulation film. The package encapsulates the substrate, the first power device, the second power device, and the electronic component.

公开(公告)号：US20190393136A1

公开(公告)日：2019-12-26

申请号：US16106010

申请日：2018-08-21

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai

IPC: H01L23/492 ,  H02M7/00 ,  H01L23/31 ,  H01L23/528 ,  H01L23/29 ,  H01L25/16

Abstract: A power device for a rectifier includes a first terminal and a second terminal for connecting an external circuit, and a circuit system located between the first terminal and the second terminal. The circuit system is electrically connected to the first terminal and the second terminal. The circuit system includes a pre-molded chip and a control device. The pre-molded chip includes a transistor and a first encapsulant for encapsulating the transistor, wherein the transistor has a first electrode, a second electrode, and a third electrode. The first terminal, the second terminal and the control device are respectively electrically connected to the first electrode, the second electrode and the third electrode of the transistor.

公开(公告)号：US20240274494A1

公开(公告)日：2024-08-15

申请号：US18179363

申请日：2023-03-07

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/367

CPC classification number: H01L23/3677 ,  H01L23/3735

Abstract: A heat dissipation structure includes a substrate and an annular groove. The substrate has an upper surface and a lower surface opposite to each other. The annular groove is configured on the upper surface of the substrate to divide the substrate into a configuration area and a periphery area. The annular groove is located between the configuration area and the periphery area. A depth of the annular groove is less than or equal to half of a thickness of the substrate.

公开(公告)号：US11810835B2

公开(公告)日：2023-11-07

申请号：US17082030

申请日：2020-10-28

Applicant: ACTRON TECHNOLOGY CORPORATION

Inventor： Hsin-Chang Tsai ,  Ching-Wen Liu

IPC: H01L23/373 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31

CPC classification number: H01L23/3735 ,  H01L23/3157 ,  H01L23/49861 ,  H01L23/5386

Abstract: An intelligent power module packaging structure includes an insulated heat dissipation substrate, a plurality of power devices, a control chip, a lead frame, and an encapsulant. The insulated heat dissipation substrate has a first surface and a second surface opposite to the first surface. The power devices are disposed on the first surface. The control chip is disposed on the first surface. The control chip provides a gate driver function for driving the power devices and a pulse width modulation function. The lead frame is bonded onto the first surface. The power devices are electrically connected to the control chip and the lead frame. The encapsulant at least encapsulates the power devices, the control chip, and a portion of the lead frame, and the second surface is entirely or partially exposed outside the encapsulant.