ALKOXIDE COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM
    1.
    发明申请
    ALKOXIDE COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM 审中-公开
    用于形成薄膜的ALKOXIDE化合物和原料

    公开(公告)号:US20140174323A1

    公开(公告)日:2014-06-26

    申请号:US14115495

    申请日:2012-05-15

    Abstract: An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

    Abstract translation: 由下式(I)表示的醇盐化合物和含有所述醇盐化合物的薄膜形成用原料。 式中,R1表示碳原子数2〜4的直链或支链烷基,R2和R3各自表示碳原子数为1〜4的直链或支链烷基。 式(I)中,R 1优选为乙基。 还优选R2和R3中的一个或两个为乙基。 作为用于化学气相沉积的原料,优选使用包含通式(I)表示的醇盐化合物的薄膜形成用原料。

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