公开(公告)号：US10438849B2

公开(公告)日：2019-10-08

申请号：US15137245

申请日：2016-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jie Zhou ,  Guannan Chen ,  Michael W. Stowell ,  Bencherki Mebarki ,  Mehul Naik ,  Srinivas D. Nemani ,  Nikolaos Bekiaris ,  Zhiyuan Wu

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.

公开(公告)号：US20170309515A1

公开(公告)日：2017-10-26

申请号：US15137245

申请日：2016-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jie Zhou ,  Guannan Chen ,  Michael W. Stowell ,  Bencherki Mebarki ,  Mehul Naik ,  Srinivas D. Nemani ,  Nikolaos Bekiaris ,  Zhiyuan Wu

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53209

Abstract: An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.