Method and apparatus for measuring pressure in a physical vapor deposition chamber
    2.
    发明授权
    Method and apparatus for measuring pressure in a physical vapor deposition chamber 有权
    用于测量物理气相沉积室中的压力的​​方法和装置

    公开(公告)号:US09177763B2

    公开(公告)日:2015-11-03

    申请号:US13837064

    申请日:2013-03-15

    Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

    Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中,用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件,该主体具有内部容积,顶部开口和底部开口,其中环形单件主体的底部包括 内部向上延伸的U形部分,围绕屏蔽的外壁布置的气体注入适配器,形成在气体注入适配器内的压力测量导管,其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近,并且其中所述间隙具有与所述内部容积基本上相同的压力,以及联接到所述压力测量导管的压力检测器。

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