公开(公告)号：US20160168687A1

公开(公告)日：2016-06-16

申请号：US14620991

申请日：2015-02-12

Applicant: APPLIED MATERIALS, INC.

Inventor： JOTHILINGAM RAMALINGAM ,  JIANXIN LEI

IPC: C23C14/22 ,  C23C4/12 ,  C23C14/35 ,  C23C14/50

CPC classification number: C23C14/564 ,  C23C4/131 ,  C23C16/45574 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32853 ,  H01J37/34

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a method of reducing particles generated by a process of depositing a refractory metal on a substrate in a process chamber includes: forming a coating atop an inner surface of the process chamber prior to carrying out the process, wherein the coating has a thermal expansion coefficient that is within 20% of a thermal expansion coefficient of the refractory metal deposited during the process. In some embodiments, a process chamber configured for depositing a refractory metal on a substrate includes: a coating disposed atop an inner surface of the process chamber and having a thermal expansion coefficient that is within 20% of a thermal expansion coefficient of the refractory metal.

Abstract translation: 本文提供了用于还原在处理室中进行的工艺中产生的颗粒的方法和装置。 在一些实施方案中，一种通过在处理室中的基底上沉积难熔金属的方法产生的颗粒的方法包括：在进行该工艺之前，在处理室的内表面的顶部上形成涂层，其中涂层具有 热膨胀系数在该过程中沉积的难熔金属的热膨胀系数的20％以内。 在一些实施例中，被配置用于将难熔金属沉积在基底上的处理室包括：设置在处理室的内表面顶部并具有在难熔金属的热膨胀系数的20％以内的热膨胀系数的涂层。

公开(公告)号：US20200048760A1

公开(公告)日：2020-02-13

申请号：US16534246

申请日：2019-08-07

Applicant: APPLIED MATERIALS, INC.

Inventor： KISHOR KALATHIPARAMBIL ,  ADOLPH M ALLEN ,  JIANXIN LEI ,  JOTHILINGAM RAMALINGAM ,  VIACHSLAV BABAYAN

IPC: C23C14/35 ,  C23C14/16

Abstract: Methods of forming a film layer using a HiPIMS PVD process include providing a bias to a substrate in a processing region of a process chamber, the substrate comprising a surface feature and the processing region of the process chamber comprising a sputter target, delivering at least one energy pulse to the sputter target to create a sputtering plasma of a sputter gas in the processing region, the at least one energy pulse having an average voltage between about 600 volts and about 1500 volts and an average current between about 50 amps and about 1000 amps at a frequency which is less than 5 kHz and greater than 100 Hz, and directing the sputtering plasma toward the sputter target to form an ionized species comprising material sputtered from the sputter target, the ionized species forming a film in the feature of the substrate having improved bottom coverage.