公开(公告)号：US20180108519A1

公开(公告)日：2018-04-19

申请号：US15691157

申请日：2017-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： VIACHSLAV BABAYAN ,  ADOLPH MILLER ALLEN ,  MICHAEL STOWELL ,  ZHONG QIANG HUA ,  CARL R. JOHNSON ,  VANESSA FAUNE ,  JINGJING LIU

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01B9/02

CPC classification number: H01J37/3467 ,  C23C14/3485 ,  C23C14/35 ,  H01B9/02 ,  H01J37/3405 ,  H01J37/3488

Abstract: A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.

公开(公告)号：US20200048760A1

公开(公告)日：2020-02-13

申请号：US16534246

申请日：2019-08-07

Applicant: APPLIED MATERIALS, INC.

Inventor： KISHOR KALATHIPARAMBIL ,  ADOLPH M ALLEN ,  JIANXIN LEI ,  JOTHILINGAM RAMALINGAM ,  VIACHSLAV BABAYAN

IPC: C23C14/35 ,  C23C14/16

Abstract: Methods of forming a film layer using a HiPIMS PVD process include providing a bias to a substrate in a processing region of a process chamber, the substrate comprising a surface feature and the processing region of the process chamber comprising a sputter target, delivering at least one energy pulse to the sputter target to create a sputtering plasma of a sputter gas in the processing region, the at least one energy pulse having an average voltage between about 600 volts and about 1500 volts and an average current between about 50 amps and about 1000 amps at a frequency which is less than 5 kHz and greater than 100 Hz, and directing the sputtering plasma toward the sputter target to form an ionized species comprising material sputtered from the sputter target, the ionized species forming a film in the feature of the substrate having improved bottom coverage.

公开(公告)号：US20180151325A1

公开(公告)日：2018-05-31

申请号：US15823176

申请日：2017-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： ADOLPH MILLER ALLEN ,  WILLIAM JOHANSON ,  VIACHSLAV BABAYAN ,  ZHONG QIANG HUA ,  CARL R. JOHNSON ,  VANESSA FAUNE ,  JINGJING LIU ,  VAIBHAV SONI ,  KIRANKUMAR SAVANDAIAH ,  SUNDARAPANDIAN RAMALINGA VIJAYALAKS REDDY

IPC: H01J37/02 ,  C23C14/34

CPC classification number: H01J37/026 ,  C23C14/34 ,  C23C14/351 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32651

Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.