公开(公告)号：US20210335603A1

公开(公告)日：2021-10-28

申请号：US16856282

申请日：2020-04-23

Applicant: Applied Materials, Inc.

Inventor： Tanmay P. Gurjar ,  Sumit S. Patankar ,  Sudhir R. Gondhalekar

IPC: H01L21/02 ,  H01J37/305

Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

公开(公告)号：US11710630B2

公开(公告)日：2023-07-25

申请号：US16856282

申请日：2020-04-23

Applicant: Applied Materials, Inc.

Inventor： Tanmay P. Gurjar ,  Sumit S. Patankar ,  Sudhir R. Gondhalekar

IPC: H01L21/02 ,  H01J37/305 ,  C23F1/08 ,  C23C14/56 ,  H01J37/32

CPC classification number: H01L21/02252 ,  C23C14/56 ,  C23F1/08 ,  H01J37/3053 ,  H01J37/32357 ,  H01J37/32522 ,  H01J2237/0437

Abstract: Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

公开(公告)号：US12125728B2

公开(公告)日：2024-10-22

申请号：US16746285

申请日：2020-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Fred Eric Ruhland ,  Sumit S. Patankar ,  Vijay D. Parkhe ,  Daniel Lee Diehl ,  Mingwei Zhu ,  Hiroyuki Takahama ,  Randy D. Schmieding

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67754

Abstract: Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.

公开(公告)号：US11610792B2

公开(公告)日：2023-03-21

申请号：US16991356

申请日：2020-08-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Fred Eric Ruhland ,  Sumit S. Patankar

IPC: H01L21/67 ,  H01L21/673

Abstract: Embodiments of substrate supports for use in a process chamber are provided herein. In some embodiments a substrate support for use in a process chamber includes a pedestal having an upper surface for supporting a substrate and an opposite lower surface, a first heater disposed within the pedestal between the upper surface and the lower surface, and thermal baffles having a plurality of voids that are fluidly isolated from each other disposed between the first heater and the lower surface to reduce heat transfer from the first heater to the lower surface of the pedestal.

公开(公告)号：USD904640S1

公开(公告)日：2020-12-08

申请号：US29677482

申请日：2019-01-21

Applicant: APPLIED MATERIALS, INC.

Designer： Fred Eric Ruhland ,  Sumit S. Patankar ,  Vijay D. Parkhe ,  Daniel Lee Diehl ,  Mingwei Zhu ,  Hiroyuki Takahama ,  Randy D. Schmieding