公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.