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    In situ generation process and system
    3.
    发明申请
    In situ generation process and system 有权

    公开(公告)号：US20230032495A1

    公开(公告)日：2023-02-02

    申请号：US17872054

    申请日：2022-07-25

    Applicant: ASM IP Holding B.V.

    Inventor： Varun Sharma ,  Michael Givens

    IPC: H01L21/3065 ,  H01L21/67

    Abstract: The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.

    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE
    6.
    发明申请
    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE 审中-公开
    用过氧化氢氧化半导体衬底形成氧化层的方法

    公开(公告)号：US20160240373A1

    公开(公告)日：2016-08-18

    申请号：US14621174

    申请日：2015-02-12

    Applicant: ASM IP Holding B.V.

    Inventor： Fu Tang ,  Michael Givens ,  Qi Xie ,  Jan Willem Maes ,  Bert Jongbloed ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken ,  Dieter Pierreux ,  Werner Knaepen ,  Harald B. Profijt ,  Cornelius A. van der Jeugd

    IPC: H01L21/02

    CPC classification number: H01L21/02236 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02238

    Abstract: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

    Abstract translation: 在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3）。 在一些实施例中，另一层材料直接沉积在氧化物层上。 例如，介电层可以直接沉积在氧化物层上。

    Sulfur-containing thin films
    7.
    发明授权
    Sulfur-containing thin films 有权
    含硫薄膜

    公开(公告)号：US09245742B2

    公开(公告)日：2016-01-26

    申请号：US14133509

    申请日：2013-12-18

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

    IPC: H01L21/31 ,  H01L21/02

    CPC classification number: H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

    Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在衬底表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

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