公开(公告)号：US20220384197A1

公开(公告)日：2022-12-01

申请号：US17824774

申请日：2022-05-25

Applicant: ASM IP Holding B.V.

Inventor： Johanna Henrica Deijkers ,  Adriaan Jacobus Martinus Mackus ,  Ageeth Anke Bol ,  Wilhelmus M. M. Kessels ,  Hessel Sprey ,  Jan Willem Maes

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  C23C16/30 ,  C23C16/455

Abstract: The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.