公开(公告)号：US20240425984A1

公开(公告)日：2024-12-26

申请号：US18748983

申请日：2024-06-20

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Quentin Nikitas Nicolas Lionel Eric Tricas ,  Werner Knaepen ,  Alessandro Viva

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: A method of forming a layer of a material on one or more substrates by ALD is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles comprising at least two precursors pulses with intervening purge pulses to form the layer of the material on the one or more substrates. During each deposition cycle, a ratio of the process chamber pressure during each precursor pulse of the at least two precursor pulses to the process chamber pressure during an intervening purge pulse is equal or different from one another.

公开(公告)号：US20250034703A1

公开(公告)日：2025-01-30

申请号：US18781473

申请日：2024-07-23

Applicant: ASM IP Holding B.V.

Inventor： Quentin Nikitas Nicolas Lionel Eric Tricas ,  Alessandro Viva ,  Theodorus G.M. Oosterlaken ,  Jeroen Fluit

IPC: C23C16/448

Abstract: A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The precursor delivery vessel is constructed and arranged to store a solid precursor and to deliver a vapor phase precursor at a vessel outlet. The system being provided with a plate provided with holes to allow for gas transport between the chamber and the part of the vessel where the solid precursor is stored.