公开(公告)号：US20250137121A1

公开(公告)日：2025-05-01

申请号：US18925862

申请日：2024-10-24

Applicant: ASM IP Holding B.V.

Inventor： Elisa K. Atosuo ,  Mikko Ritala

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for depositing metal phosphide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a metal halide precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form metal phosphide-containing material on the substrate.