公开(公告)号：US11562901B2

公开(公告)日：2023-01-24

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

公开(公告)号：US20220310387A1

公开(公告)日：2022-09-29

申请号：US17701433

申请日：2022-03-22

Applicant: ASM IP Holding B.V.

Inventor： WanGyu Lim ,  HeeSung Kang ,  JaeOk Ko ,  JaeBin Ahn ,  Sunja Kim ,  YoungJae Kim ,  DongHyun Ko

IPC: H01L21/02 ,  H01L21/764

Abstract: A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.

公开(公告)号：US12218000B2

公开(公告)日：2025-02-04

申请号：US17481979

申请日：2021-09-22

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764 ,  H01L21/768

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US11551925B2

公开(公告)日：2023-01-10

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20220102190A1

公开(公告)日：2022-03-31

申请号：US17481979

申请日：2021-09-22

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US20200312652A1

公开(公告)日：2020-10-01

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20250132192A1

公开(公告)日：2025-04-24

申请号：US19001463

申请日：2024-12-25

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764 ,  H01L21/768

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US12283479B2

公开(公告)日：2025-04-22

申请号：US17847531

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： JaeOk Ko ,  HeeSung Kang ,  JaeBin Ahn ,  SeokJae Oh ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim ,  Shinya Ueda

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768

Abstract: Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

公开(公告)号：US20230142899A1

公开(公告)日：2023-05-11

申请号：US17979237

申请日：2022-11-02

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  SeokJae Oh ,  HyunGyu Jang ,  HeeSung Kang ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/505 ,  H01J37/32743 ,  H01J37/32449 ,  C23C16/345 ,  C23C16/52 ,  C23C16/45536 ,  H01J2237/3321

Abstract: A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

公开(公告)号：US20220415650A1

公开(公告)日：2022-12-29

申请号：US17847531

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： JaeOk Ko ,  HeeSung Kang ,  JaeBin Ahn ,  SeokJae Oh ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim ,  Shinya Ueda

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/02 ,  C23C16/505 ,  C23C16/04

Abstract: Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.