公开(公告)号：US08784951B2

公开(公告)日：2014-07-22

申请号：US13679502

申请日：2012-11-16

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuka

IPC: H01L21/31 ,  C23C16/00 ,  C23C16/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/24 ,  C23C16/505 ,  H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32055

Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成绝缘膜的方法包括：（i）将其分子中具有四个或更多个硅原子的未激发的非卤化物前体吸附到放置在 反应空间; （ii）在不施加RF功率的情况下向反应空间供应无氧反应物，以将前体吸附的基底暴露于反应物; 和（iii）在步骤（ii）之后，将RF功率施加到反应空间，同时在反应空间中供应无氧反应物; 和（iv）重复步骤（i）至（iii）作为循环，从而在基材上沉积绝缘膜。