公开(公告)号：US20250110411A1

公开(公告)日：2025-04-03

申请号：US18900231

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G03F7/00 ,  C23C16/24 ,  C23C16/455 ,  G03F7/16 ,  H01L21/033

Abstract: A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.

公开(公告)号：US20240339321A1

公开(公告)日：2024-10-10

申请号：US18624866

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  Charles Dezelah ,  David Kurt de Roest

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0274 ,  G03F7/0042

Abstract: Structures, related methods, and related systems are disclosed. An embodiment of a structure comprises a resist and an inhibition layer. The EUV resist comprises exposed resist areas and unexposed resist areas. The inhibition layer inhibits the unexposed resist areas versus the exposed resist areas with respect to vapor phase deposition of a hard mask.

公开(公告)号：US20250122610A1

公开(公告)日：2025-04-17

申请号：US18914403

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Ranjit Borude ,  Imane Abdellaoui ,  Viljami Pore ,  Ikhlas Rahmat

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/40

Abstract: Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.