公开(公告)号：US20230340663A1

公开(公告)日：2023-10-26

申请号：US18137930

申请日：2023-04-21

Applicant: ASM IP Holding B.V.

Inventor： Fanyong Ran ,  Zecheng Liu ,  Tomohiro Kubota ,  Takashi Yoshida ,  Kai Okabe

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/52

CPC classification number: C23C16/32 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing plasma power for a plasma power period to form the silicon oxycarbide layer. Exemplary silicon precursors comprise a molecule comprising silicon, oxygen, carbon, and optionally nitrogen. The silicon precursor can further include one or more of (i) one or two silicon-oxygen bonds, (ii) one or two silicon-carbon bonds, or (iii) one carbon-carbon double bond.

公开(公告)号：US20230235453A1

公开(公告)日：2023-07-27

申请号：US18149744

申请日：2023-01-04

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  Kai Okabe ,  Zecheng Liu

IPC: C23C16/40 ,  C23C16/513

CPC classification number: C23C16/401 ,  C23C16/513

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.