Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same
    1.
    发明申请
    Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same 审中-公开
    气体供应歧管和供应气体的方法

    公开(公告)号:US20150240359A1

    公开(公告)日:2015-08-27

    申请号:US14188760

    申请日:2014-02-25

    Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

    Abstract translation: 用于晶片处理反应器的气体入口系统包括适于连接到晶片处理反应器的气体入口的管状气体歧管管道; 以及包括用于将第一气体输送到管状气体歧管导管中的第一进料和用于将第二气体供给到管状气体歧管导管中的第二进料的气体进料。 每个进料具有在管状气体歧管导管的第一轴向位置处连接到管状气体歧管导管的两个或更多个喷射端口,并且每个气体进料的喷射端口沿管状气体歧管导管的圆周均匀分布 第一个轴向位置。

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