公开(公告)号：US20250006521A1

公开(公告)日：2025-01-02

申请号：US18755599

申请日：2024-06-26

Applicant: ASM IP Holding B.V.

Inventor： Senthil Sivaraman ,  Samer Banna ,  Senthil Arasu Subas Chandra Bose

IPC: H01L21/67

Abstract: Substrate processing systems have expanded substrate processing capabilities. In some examples, this may be accomplished by providing an inboard substrate handling chamber (e.g., with six facets or side walls) and an outboard substrate handling chamber (e.g., with five facets or side walls). The inboard substrate handling chamber may be connected with additional substrate processing chambers. The inboard substrate handling chamber may be connected to the outboard substrate handling chamber by an additional outboard load-lock module. These features enable a manufacturer to increase the number of substrate processing chambers in a substrate processing system or line.

公开(公告)号：US20240426381A1

公开(公告)日：2024-12-26

申请号：US18745241

申请日：2024-06-17

Applicant: ASM IP Holding B.V.

Inventor： Mandar Deshpande ,  Senthil Arasu Subas Chandra Bose ,  Samer Banna

IPC: F16K3/02

Abstract: Thermal breaks and/or gaps between portions of interfacing surfaces of two chambers reduce heat transfer between the chambers. An interface surface (e.g., of a gate valve) includes (i) a base surface; (ii) a raised ring surface extending outward beyond the base surface, wherein the raised ring surface extends around a gate valve access opening; (iii) a seal support surface extending around the raised ring surface; and (iv) at least one raised boss surface extending outward beyond the base surface. The interface surface defines an outer perimeter having a total interface area. The raised ring surface and raised boss surface(s) define at least a portion of a total contacting surface area of the interface surface that is spaced outward from the base surface. The total contacting surface area of the interface surface is less than 10% of the total interface area and/or less than 10% of the base surface's surface area.

公开(公告)号：US20240178021A1

公开(公告)日：2024-05-30

申请号：US18522152

申请日：2023-11-28

Applicant: ASM IP Holding B.V.

Inventor： Senthil Sivaraman ,  Mandar Deshpande ,  Samer Banna

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67201 ,  H01L21/67098 ,  H01L21/6719 ,  H01L21/67742

Abstract: A load lock arrangement includes a load lock body having an upper plate member defining an upper accessory seat, an intermediate plate member spaced apart from the upper plate member and defining an intermediate accessory seat, and a lower plate member separated from the upper plate member by the intermediate plate member and defining a lower accessory seat. One of an upper heater and an upper accessory seat blanking plate is fixed to the upper accessory seat; one of an upper chill plate and an intermediate accessory seat blanking plate fixed to the intermediate accessory seat; and one of a lower chill plate, a lower heater, and a lower accessory seat blanking plate fixed to the lower accessory seat. Semiconductor processing systems, methods of making load lock arrangements, and material layer deposition methods are also described.

公开(公告)号：US20250038012A1

公开(公告)日：2025-01-30

申请号：US18783113

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Samer Banna ,  Mandar Deshpande ,  Salam Harb

IPC: H01L21/67 ,  C23C16/02 ,  C23C16/458 ,  C23C16/56

Abstract: Substrate processing systems and methods include sealing a gate valve connecting a first chamber (e.g., a load-lock module) and a second chamber (e.g., an equipment front end module), wherein a first side of the first chamber connects to layer deposition equipment and a second side of the first chamber connects to the second chamber via the gate valve. The second chamber receives (i) incoming substrates to be supplied to the first chamber and (ii) outgoing substrates to be removed from the first chamber. In use, a processed substrate is moved from the layer deposition equipment into the first chamber. This processed substrate is cooled by transferring inert gas from the second chamber into the first chamber and into contact with the processed substrate, thereby transferring heat from the processed substrate to the inert gas. After passing over the processed substrate, the inert gas is exhausted from the first chamber.