公开(公告)号：US12276021B2

公开(公告)日：2025-04-15

申请号：US17677287

申请日：2022-02-22

Applicant: ASM IP Holding B.V.

Inventor： Seunghyun Lee

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C16/44

Abstract: Methods for forming phosphosilicate glass layers are disclosed. Exemplary methods include forming a silicon-containing layer overlying the substrate and depositing a phosphorus-containing layer overlying the substrate. The deposited phosphorus-containing layer can include P2O3 and/or exhibit a melting temperature less than or equal to 500° C. The deposited phosphorus-containing layer can be heated to flow and oxidized to provide desired properties.

公开(公告)号：US12243742B2

公开(公告)日：2025-03-04

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： Seunghyun Lee ,  Hyunchul Kim ,  Seungwoo Choi ,  Yeahyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.