公开(公告)号：US20200183290A1

公开(公告)日：2020-06-11

申请号：US16792267

申请日：2020-02-16

Applicant: ASML Netherlands B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/27

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

公开(公告)号：US20180373166A1

公开(公告)日：2018-12-27

申请号：US16007112

申请日：2018-06-13

Applicant: ASML Netherlands B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/27

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

公开(公告)号：US20210208513A1

公开(公告)日：2021-07-08

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US20180341182A1

公开(公告)日：2018-11-29

申请号：US15977866

申请日：2018-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Nicolas Mauricio WEISS ,  Jean-Pierre Agnes Henricus Marie VAESSEN

IPC: G03F7/20

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

公开(公告)号：US20250021021A1

公开(公告)日：2025-01-16

申请号：US18712649

申请日：2022-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Giulio BOTTEGAL ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/00

Abstract: A method of calibrating a model for inferring a value for a parameter of interest from a measurement signal including obtaining a first set of metrology signals, corresponding known reference values for the parameter of interest; and at least first and second constraining sets of metrology signals relating to the same application as the first set of metrology signals. The first set of metrology signals and corresponding reference data is used to train at least one model to infer a value for the parameter of interest from the first set of metrology signals subject to a constraint that a difference between first inferred values for the parameter of interest using the model on at least the first constraining set of metrology signals and second inferred values for the parameter of interest using the model on the second constraining set of metrology signals is below a threshold value.

公开(公告)号：US20210255552A1

公开(公告)日：2021-08-19

申请号：US17241142

申请日：2021-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis TSIATMAS ,  Samee Ur REHMAN ,  Paul Christiaan HINNEN ,  Jean-Pierre Agnes Henricus Marie VAESSEN ,  Nicolas Mauricio WEISS ,  Gonzalo Roberto SANGUINETTI ,  Thomai ZACHAROPOULOU ,  Martijn Maria ZAAL

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US20180321597A1

公开(公告)日：2018-11-08

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/00

CPC classification number: G03F7/70625 ,  G01M11/00 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.