公开(公告)号：US20210080836A1

公开(公告)日：2021-03-18

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20220229373A1

公开(公告)日：2022-07-21

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200026201A1

公开(公告)日：2020-01-23

申请号：US16495416

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Everhardus Cornelis MOS ,  Weitian KOU ,  Alexander YPMA ,  Michiel KUPERS ,  Hyunwoo YU ,  Min-Sub HAN

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US20200019067A1

公开(公告)日：2020-01-16

申请号：US16335277

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cedric Desire GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20190072857A1

公开(公告)日：2019-03-07

申请号：US16084586

申请日：2017-05-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Michiel KUPERS ,  Wolfgang Helmut HENKE

IPC: G03F7/20

Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.

公开(公告)号：US20220035259A1

公开(公告)日：2022-02-03

申请号：US17501911

申请日：2021-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün CEKLI ,  Masashi ISHIBASHI ,  Wendy Johanna Martina VAN DE VEN ,  Willem Seine Christian ROELOFS ,  Elliott Gerard MC NAMARA ,  Rizvi RAHMAN ,  Michiel KUPERS ,  Emil Peter SCHMITT-WEAVER ,  Erik Henri Adriaan DELVIGNE

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US20200050180A1

公开(公告)日：2020-02-13

申请号：US16340771

申请日：2017-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Min-Sub HAN

IPC: G05B19/418

Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.

公开(公告)号：US20190137892A1

公开(公告)日：2019-05-09

申请号：US16098165

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün CEKLI ,  Masashi ISHIBASHI ,  Wendy Johanna Marthina VAN DE VEN ,  Willem Seine Christian ROELOFS ,  Elliott Gerard MC NAMARA ,  Rizvi RAHMAN ,  Michiel KUPERS ,  Emil Peter SCHMITT-WEAVER ,  Erilk Henri Adriaan DELVIGNE

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US20180373162A1

公开(公告)日：2018-12-27

申请号：US16061257

申请日：2016-12-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Daan Maurits SLOTBOOM ,  Michiel KUPERS

IPC: G03F7/20 ,  G03F9/00

Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.