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公开(公告)号：US20220229373A1
公开(公告)日：2022-07-21
申请号：US17715112
申请日：2022-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cédric Désiré GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US20220187786A1
公开(公告)日：2022-06-16
申请号：US17601307
申请日：2020-03-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc HAUPTMANN , Amir Bin ISMAIL , Rizvi RAHMAN , Jiapeng LI
IPC: G05B19/404 , G03F7/20
Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.
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公开(公告)号：US20220236647A1
公开(公告)日：2022-07-28
申请号：US17635290
申请日：2020-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc HAUPTMANN , Cornelis Johannes Henricus LAMBREGTS , Amir Bin ISMAIL , Rizvi RAHMAN , Allwyn BOUSTHEEN , Raheleh PISHKARI , Everhardus Cornelis MOS , Ekaterina Mikhailovna VIATKINA , Roy WERKMAN , Ralph BRINKHOF
IPC: G03F7/20
Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.
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公开(公告)号：US20200050180A1
公开(公告)日：2020-02-13
申请号：US16340771
申请日：2017-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Min-Sub HAN
IPC: G05B19/418
Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.
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公开(公告)号：US20250028254A1
公开(公告)日：2025-01-23
申请号：US18712560
申请日：2022-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Huaichen ZHANG , Vadim Yourievich TIMOSHKOV , Cyrus Emil TABERY , Marc HAUPTMANN , Oleksandr KHODKO
IPC: G03F7/00
Abstract: A method for determining a mechanical property of a layer applied to a substrate. The method includes obtaining input data including metrology data relating to the layer and layout data relating to a layout of a pattern to be applied in the layer. A first model or first model term is used to determine a global mechanical property related to the layer based on at least the input data; and at least one second model or at least one second model term is used to predict a mechanical property distribution or associated overlay map based on the first mechanical property and the layout data, the mechanical property distribution describing the mechanical property variation over the layer.
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Patent Agency Ranking
公开(公告)号：US20210080836A1
公开(公告)日：2021-03-18
申请号：US17102850
申请日：2020-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cédric Désiré GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US20200019067A1
公开(公告)日：2020-01-16
申请号：US16335277
申请日：2017-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cedric Desire GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US20170363969A1
公开(公告)日：2017-12-21
申请号：US15527645
申请日：2015-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc HAUPTMANN , Dylan John David DAVIES , Paul JANSSEN , Naoko TSUGAMA , Richard Joseph BRULS , Kornelis Tijmen HOEKERD , Edwin Johannes Maria JANSSEN , Petrus Johannes VAN DEN OEVER , Ronald VAN DER WILK , Antonius Hubertus VAN SCHIJNDEL , Jorge Alberto VIEYRA SALAS
CPC classification number: G03F7/70616 , G01N21/9501 , G01N27/61 , G01N2021/95676 , G03F1/84 , G03F7/70508 , G03F7/70783 , H01L22/12 , H01L22/20
Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.
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公开(公告)号：US20240231233A9
公开(公告)日：2024-07-11
申请号：US18277223
申请日：2022-02-07
Applicant: ASML NETHERLANDS B.V.
Abstract: Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.
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公开(公告)号：US20240134283A1
公开(公告)日：2024-04-25
申请号：US18277223
申请日：2022-02-07
Applicant: ASML NETHERLANDS B.V.
Abstract: Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.
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