公开(公告)号：US09324607B2

公开(公告)日：2016-04-26

申请号：US14815751

申请日：2015-07-31

Applicant: AVOGY, INC.

Inventor： Patrick James Lazlo Hyland ,  Brian Joel Alvarez ,  Donald R. Disney

IPC: H01L21/768 ,  H01L21/283 ,  H01L23/528 ,  H01L29/20 ,  H01L23/532 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L23/495 ,  H01L23/482 ,  H01L23/00

CPC classification number: H01L21/7685 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/76865 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/528 ,  H01L23/53204 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0518 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06102 ,  H01L2224/06181 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83815 ,  H01L2224/9221 ,  H01L2224/9222 ,  H01L2224/92242 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/03

Abstract: A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.

公开(公告)号：US20150102360A1

公开(公告)日：2015-04-16

申请号：US14577875

申请日：2014-12-19

Applicant: Avogy, Inc.

Inventor： Brian Joel Alvarez ,  Donald R. Disney ,  Hui Nie ,  Patrick James Lazlo Hyland

IPC: H01L29/20 ,  H01L29/417 ,  H01L29/49 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L29/2003 ,  H01L21/28575 ,  H01L21/28581 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/452 ,  H01L29/475 ,  H01L29/4958 ,  H01L29/861 ,  H01L29/872 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0348 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/03848 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/06181 ,  H01L2224/09181 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/9202 ,  H01L2224/9221 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01009 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2924/04941 ,  H01L2224/37099 ,  H01L2224/37599 ,  H01L2924/206

Abstract: An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal.

Abstract translation: 半导体器件的实施例包括具有第一表面和第二表面的氮化镓（GaN）衬底。 第二表面基本上与第一表面相对，至少一个器件层耦合到第一表面，并且背面金属耦合到第二表面。 顶部金属叠层耦合到至少一个器件层。 顶部金属堆叠包括耦合到至少一个器件层的表面的接触金属，耦合到接触金属的保护层，耦合到保护层的扩散阻挡层以及耦合到扩散阻挡层的焊盘金属。 半导体器件被配置为在顶部金属堆叠和背面金属之间导电。

公开(公告)号：US20150340271A1

公开(公告)日：2015-11-26

申请号：US14815751

申请日：2015-07-31

Applicant: AVOGY, INC.

Inventor： Patrick James Lazlo Hyland ,  Brian Joel Alvarez ,  Donald R. Disney

IPC: H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/20 ,  H01L29/417 ,  H01L29/66 ,  H01L21/283 ,  H01L23/528

CPC classification number: H01L21/7685 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/76865 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/528 ,  H01L23/53204 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0518 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06102 ,  H01L2224/06181 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83815 ,  H01L2224/9221 ,  H01L2224/9222 ,  H01L2224/92242 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/03

Abstract: A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.

Abstract translation: 用于制造垂直氮化镓（GaN）功率器件的方法可以包括提供具有顶表面和底表面的GaN衬底，形成耦合到GaN衬底的顶表面的器件层，并在顶部形成金属接触 垂直GaN功率器件的表面。 该方法可以进一步包括通过形成耦合到GaN衬底的底表面的粘合层形成背面金属，形成耦合到粘附层的扩散阻挡层，以及形成与扩散阻挡层相连的保护层。 垂直GaN功率器件可以被配置为在金属触点和背面金属之间导电。