公开(公告)号：US20220377161A1

公开(公告)日：2022-11-24

申请号：US17324958

申请日：2021-05-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuanhao YU ,  Chung Ju YU ,  Jui-Hsien WANG ,  Chai-Chi LIN ,  Hong Jie CHEN

IPC: H04M1/02 ,  H01L23/498 ,  H01L25/16

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package comprises a substrate, an antenna, and an active component. The antenna is disposed at least partially within the substrate. The active component is disposed on the substrate and electrically connected to the antenna. A location of the antenna is configured to be adjustable with respect to a location of the active component.

公开(公告)号：US20220373670A1

公开(公告)日：2022-11-24

申请号：US17324965

申请日：2021-05-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuanhao YU ,  Chung Ju YU ,  Wei-Fan WU ,  Chai-Chi LIN ,  Hong Jie CHEN

IPC: G01S13/58 ,  H01L25/16 ,  H01Q1/27

Abstract: At least some embodiments of the present disclosure relate to a wearable device. The wearable device comprises a substrate, a detecting module disposed on the substrate, and a control module disposed on the substrate. The control module is electrically connected to the detecting module. The control module is configured to receive a signal from the detecting module and to control the wearable device in response to the signal.

公开(公告)号：US20180166370A1

公开(公告)日：2018-06-14

申请号：US15379362

申请日：2016-12-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chai-Chi LIN ,  Chih-Cheng LEE ,  Hsing Kuo TIEN ,  Chih-Yung YANG

IPC: H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L25/16 ,  H01L25/065 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/481 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0655 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/16225

Abstract: A semiconductor substrate includes an interconnection structure and a dielectric layer. The dielectric layer surrounds the interconnection structure and defines a first cavity. The first cavity is defined by a first sidewall, a second sidewall, and a first surface of the dielectric layer. The first sidewall is laterally displaced from the second sidewall.