公开(公告)号：US07754590B2

公开(公告)日：2010-07-13

申请号：US11468372

申请日：2006-08-30

Applicant: Hans-Joachim Schulze ,  Holger Schulze ,  Andreas Kyek

Inventor： Hans-Joachim Schulze ,  Holger Schulze ,  Andreas Kyek

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01L29/66333

Abstract: Some embodiments of the invention relate to manufacturing a semiconductor device with an implantation layer on a semiconductor substrate including a method of manufacturing such an implantation layer, wherein said implantation layer is formed in an implantation step at a predetermined depth of penetration, determined from a top surface of said semiconductor substrate, using a particle beam, by increasing its path distance to a main implantation peak and correspondingly increasing the energy level of said particle beam for producing an undamaged implantation layer having a thickness that is increased significantly compared with the thickness of an implantation layer that would be produced at said predetermined depth of penetration using a particle beam with non-increased path distance and energy level.

Abstract translation: 本发明的一些实施例涉及在半导体衬底上制造具有注入层的半导体器件，该半导体器件包括制造这种注入层的方法，其中所述注入层以从顶部确定的预定穿透深度的注入步骤形成 所述半导体衬底的表面使用粒子束，通过增加其到主注入峰的路径距离并相应地增加所述粒子束的能级，用于产生未损坏的注入层，其具有与其厚度相比显着增加的厚度 使用具有非增加的路径距离和能级的粒子束在所述预定的穿透深度下产生的植入层。

公开(公告)号：US07772572B2

公开(公告)日：2010-08-10

申请号：US12063000

申请日：2008-04-04

Applicant: Andreas Kyek

Inventor： Andreas Kyek

IPC: H01J37/304

CPC classification number: H01J43/02 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0045

Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

公开(公告)号：US20080185952A1

公开(公告)日：2008-08-07

申请号：US12063000

申请日：2008-04-04

Applicant: Andreas Kyek

Inventor： Andreas Kyek

IPC: H01J31/48

CPC classification number: H01J43/02 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0045

Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

公开(公告)号：US07417240B2

公开(公告)日：2008-08-26

申请号：US10718777

申请日：2003-11-21

Applicant: Andreas Kyek

Inventor： Andreas Kyek

IPC: H01J37/304

CPC classification number: H01J43/02 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0045

Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

公开(公告)号：US20080124902A1

公开(公告)日：2008-05-29

申请号：US11468372

申请日：2006-08-30

Applicant: Hans-Joachim Schulze ,  Holger Schulze ,  Andreas Kyek

Inventor： Hans-Joachim Schulze ,  Holger Schulze ,  Andreas Kyek

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01L29/66333

Abstract: Some embodiments of the invention relate to manufacturing a semiconductor device with an implantation layer on a semiconductor substrate including a method of manufacturing such an implantation layer, wherein said implantation layer is formed in an implantation step at a predetermined depth of penetration, determined from a top surface of said semiconductor substrate, using a particle beam, by increasing its path distance to a main implantation peak and correspondingly increasing the energy level of said particle beam for producing an undamaged implantation layer having a thickness that is increased significantly compared with the thickness of an implantation layer that would be produced at said predetermined depth of penetration using a particle beam with non-increased path distance and energy level.

Abstract translation: 本发明的一些实施例涉及在半导体衬底上制造具有注入层的半导体器件，该半导体器件包括制造这种注入层的方法，其中所述注入层以从顶部确定的预定穿透深度的注入步骤形成 所述半导体衬底的表面使用粒子束，通过增加其到主注入峰的路径距离并相应地增加所述粒子束的能级，用于产生未损坏的注入层，其具有与其厚度相比显着增加的厚度 使用具有非增加的路径距离和能级的粒子束在所述预定的穿透深度下产生的植入层。