公开(公告)号：US20230245848A1

公开(公告)日：2023-08-03

申请号：US18023545

申请日：2021-08-27

Applicant: ULVAC-PHI, INCORPORATED

Inventor： Scott R. Bryan ,  Gregory L. Fisher ,  David H. Narum ,  Ronald E. Negri

IPC: H01J37/02 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/28 ,  H01J2237/0045 ,  H01J2237/2527

Abstract: Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

公开(公告)号：US11715618B2

公开(公告)日：2023-08-01

申请号：US17392758

申请日：2021-08-03

Applicant: FEI Company

Inventor： Yuchen Deng ,  Alexander Henstra ,  Peter Tiemeijer

IPC: H01J37/02 ,  H01J37/244 ,  H01J37/04

CPC classification number: H01J37/026 ,  H01J37/045 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2448

Abstract: Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

公开(公告)号：US20140151554A1

公开(公告)日：2014-06-05

申请号：US14081465

申请日：2013-11-15

Applicant: Hermes Microvision, Inc.

Inventor： Weiming Ren ,  Zhongwei Chen

IPC: H01J37/26 ,  H01J37/14 ,  H01J37/29

CPC classification number: H01J37/026 ,  H01J37/14 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/0045 ,  H01J2237/0262 ,  H01J2237/1405 ,  H01J2237/2801 ,  H01J2237/2803

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例，其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷，从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场，以将具有低动能的一些二次电子反射回样品表面。

公开(公告)号：US20100230591A1

公开(公告)日：2010-09-16

申请号：US12668267

申请日：2008-06-05

Applicant: John Berriman ,  Peter Rosenthal

Inventor： John Berriman ,  Peter Rosenthal

IPC: H01J37/26 ,  H01J37/02

CPC classification number: H01J37/026 ,  H01J37/26 ,  H01J2237/0045 ,  H01J2237/0453 ,  H01J2237/1514

Abstract: A transmission electron microscope has a target body position on the electron optical axis of the microscope, and an electrically conductive body off the axis of the microscope. The microscope also has an electron source for producing an axial electron beam. In use, the beam impinges upon a target body located at the target body position. The microscope further has a system for simultaneously producing a separate off-axis electron beam. In use, the off-axis electron beam impinges on the electrically conductive body causing secondary electrons to be emitted therefrom. The electrically conductive body is located such that the emitted secondary electrons impinge on the target body to neutralise positive charge which may build up on the target body.

Abstract translation: 透射电子显微镜在显微镜的电子光轴上具有目标体位置，并且离开显微镜轴线的导电体。 显微镜还具有用于产生轴向电子束的电子源。 在使用中，梁撞击位于目标体位置的目标体。 显微镜还具有同时产生单独的离轴电子束的系统。 在使用中，离轴电子束照射在导电体上，导致从其发射二次电子。 导电体被定位成使得发射的二次电子撞击目标体以中和可能在目标体上累积的正电荷。

公开(公告)号：US20080087839A1

公开(公告)日：2008-04-17

申请号：US11550140

申请日：2006-10-17

Applicant: Rajesh DORAI

Inventor： Rajesh DORAI

IPC: H01J1/50

CPC classification number: H01J37/3266 ,  H01J37/32412 ,  H01J2237/0045

Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

Abstract translation: 公开了一种限制二次电子在晶片上的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。 该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。 该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。 该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

公开(公告)号：US5164599A

公开(公告)日：1992-11-17

申请号：US732778

申请日：1991-07-19

Applicant: Victor M. Benveniste

Inventor： Victor M. Benveniste

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/02 ,  H01L21/265

CPC classification number: H01J37/026 ,  H01J2237/0045 ,  H01J2237/31701

Abstract: An ion implantation featuring an improved beam neutralizer. A cylindrical electron source encircles the ion beam at a location just before the ion beam enters an implantation chamber. Regularly spaced cavities in the electron source contain wire filaments which are energized to emit electrons. The electrons are accelerated through the region of the ion beam and impact an inwardly facing wall of the cylindrical electron support. This causes low-energy electron emissions which neutralize the ion beam. Performance of the beam neutralizer is enhanced by injecting an ionizable gas into the region between the electron emitting surface and the ion beam.

公开(公告)号：US07977632B2

公开(公告)日：2011-07-12

申请号：US12253476

申请日：2008-10-17

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

公开(公告)号：US20110139981A1

公开(公告)日：2011-06-16

申请号：US13059537

申请日：2009-08-08

Applicant: Ritsuo Fukaya ,  Nobuhiro Okai ,  Koki Miyahara ,  Zhigang Wang

Inventor： Ritsuo Fukaya ,  Nobuhiro Okai ,  Koki Miyahara ,  Zhigang Wang

IPC: G01N23/225 ,  G01N23/00

CPC classification number: H01J37/026 ,  H01J37/09 ,  H01J37/15 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/0045 ,  H01J2237/0458

Abstract: An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.

Abstract translation: 本发明的目的是提供一种扫描电子显微镜，其目的在于可以控制从样品与其他部件发射的电子的碰撞产生的电子的量，以及使用电子量的控制的样品充电控制方法。 为了实现该目的，提出了一种扫描电子显微镜，其包括电子束可以通过的多个孔，以及用于切换电子束的孔的机构，以及通过切换孔来控制样品充电的方法。 多个孔是至少两个孔。 分别具有不同二次电子发射效率的部分设置在与样品相对的一侧上的至少两个孔的周边部分上。 可以通过切换孔来控制从样品发射的电子的碰撞产生的电子的量。

公开(公告)号：US07772572B2

公开(公告)日：2010-08-10

申请号：US12063000

申请日：2008-04-04

Applicant: Andreas Kyek

Inventor： Andreas Kyek

IPC: H01J37/304

CPC classification number: H01J43/02 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0045

Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

公开(公告)号：US07547884B2

公开(公告)日：2009-06-16

申请号：US11449650

申请日：2006-06-09

Applicant: Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

Inventor： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

Abstract translation: 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。